Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

Chen, P.J.; Colaianni, M. L.; Yates, John T.

doi:10.1016/0039-6028(92)90833-r

Cited by 58 publications

(46 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both PH 3 and PH 2 D are observed at 635 K, indicating that the 635 K phosphine desorption process occurs by means of a recombination step between PH 2 (a) and H(a) or D(a). This result is similar to that obtained for NH 2 on Si(100), where a high temperature recombination process to produce NH 3 was also observed [10,22,27,28]. HREELS studies of a mixed D(a) and PHx(a) layer did not disclose a P-D stretching mode (1625 cm"1) within the detection limit of HREELS.…”

Section: Desorption Of Other Species From Ph 3 Treated Si(100)supporting

confidence: 87%

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Colaianni

Chen

Yates

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The dissociative adsorption of phosphine (PH3) on Si(100)-(2×1) and its high temperature thermal behavior have been studied by high-resolution electron energy loss spectroscopy (HREELS), Auger electron spectroscopy, and by temperature programmed desorption (TPD). Phosphine adsorbs dissociatively onto Si(100)-(2×1) at 100 K as PH2 and H species, as revealed by vibrational bands at 1050 cm−1 [δsc(PH2)] and 2100 cm−1 [ν(Si–H)]. The PH2(a) undergoes thermal decomposition to adsorbed P and H near 650 K, as determined by HREELS. TPD measurements reveal two PH3 desorption processes at 485 and 635 K. The 635 K desorption is shown to result from PH2+H recombination, while the mechanism for the 485 K desorption cannot be definitely identified. Additionally, two H2 desorption states were observed at 685 and 770 K.

show abstract

Section: Desorption Of Other Species From Ph 3 Treated Si(100)supporting

confidence: 87%

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Colaianni

Chen

Yates

1994

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…from ͑Si͒NH 2 structures as the surface is annealed. At present, it is known that there are three processes occurring during the thermal annealing of the NH 3 -saturated Si͑100͒ surface: ͑i͒ decomposition of ͑Si͒NH 2 to ͑Si͒ 2 NH and ͑Si͒ 3 N, which also leads to the formation of additional Si-H species; 3,6-8, [10][11][12][13]26,27 ͑ii͒ desorption of ammonia and of hydrogen that have been observed to occur at 650 and 780 K, respectively; 7,9,[13][14][15]23,47 and ͑iii͒ migration of N atoms, initially into the bulk of the Si lattice, 1,2,7,8,26,27,52 followed by their segregation back to the surface around 1000 K. 27 Widjaja and Musgrave considered two decomposition pathways, outlined in Fig. 2, and offered a detailed mechanistic picture of the possible decomposition processes.…”

Section: Introductionmentioning

confidence: 99%

“…28 The process of thermal decomposition of the ammoniacovered surface has also been debated intensively. [1][2][3][6][7][8][9][10][11][12][13][14][15]26,27,[47][48][49][50][51] There was originally a controversy about the nature of the decomposed species formed FIG. 1.…”

Section: Introductionmentioning

confidence: 99%

Cooperative nitrogen insertion processes: Thermal transformation ofNH3on a Si(100) surface

Rodríguez‐Reyes

Teplyakov

2007

Phys. Rev. B

View full text Add to dashboard Cite

The thermal behavior of an ammonia-covered Si͑100͒ surface is investigated by infrared spectroscopy and density functional methods. Upon adsorption at room temperature, ͑Si͒NH 2 and Si-H species are formed on the surface. Comparison of the vibrational studies with density functional calculations suggests that the ͑Si͒NH 2 structures are preferentially located on the same side along the silicon dimer row on a ͑2 ϫ 1͒ reconstructed Si͑100͒ surface, although a mixture of different long-range configurations is likely formed. Decomposition of these ͑Si͒NH 2 species is observed to start at temperatures as low as 500 K. Theoretical predictions of the vibrational modes indicate that at this point, the spectrum is composed of a combination of ͑Si͒ 2 NH and ͑Si͒ 3 N vibrational signatures, which result from insertion of N into Si-Si bonds. Our computational study of the formation of ͑Si͒ 2 NH structures indicates that subsurface insertion is more feasible if the strain imposed during the insertion in a Si dimer is attenuated by a ͑Si͒ 2 NH structure already inserted in the neighboring dimer along the same silicon dimer row. This cooperative reaction lowers the energetic requirements for subsurface insertion, providing a theoretical explanation for the mechanism of thermal decomposition of NH 3 on Si͑100͒ and for other systems where subsurface migration is observed experimentally.

show abstract

“…on Si substrates has been studied extensively [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] using different surface sensitive techniques including HREELS, UPS, XPS, AES, LEED and STM. On both Si(1 111)-7x7 and Si(100)-2xl surfaces, NH 3 was found to dissociatively adsorb on the substrates at T = 80 K. Further thermal treatment caused continuous NH bond breaking, although the NH 2 species behaved differently on the two surfaces [10].…”

Section: Introductionmentioning

confidence: 99%

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Lin

1994

Surface Science

View full text Add to dashboard Cite

Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

Cited by 58 publications

References 15 publications

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Unique hydride chemistry on silicon–PH3 interaction with Si(100)-(2×1)

Cooperative nitrogen insertion processes: Thermal transformation ofNH3on a Si(100) surface

The 308 nm laser photodissociation of HN3 adsorbed on Si(111)-7 × 7

Contact Info

Product

Resources

About