Silicon-based high-power traveling wave photodetector with inductive gain peaking

Abstract

We demonstrate Ge/Si high-power and high-speed distributed traveling wave photodetectors (TWPD) by using the inductive gain peaking technique. Input terminals of TW electrodes are open to enhance RF output efficiencies to output loads. Furthermore, optimized on-chip spiral inductors are incorporated at output terminals of TW electrodes to alleviate bandwidth degradations caused by the absences of matching impedances. A comprehensive equivalent circuit model is developed to calculate the frequency response of this scheme. It is used to optimize the design, and then is validated by measurement results. After inducing on-chip inductors, the bandwidths of 4-stage and 8-stage TWPDs are improved from 32 to 44 GHz and 16 to 24 GHz, respectively. Maximum RF output powers of 4-stage and 8-stage TWPDs with on-chip inductors are measured to be 5.7 dBm and 9.4 dBm at 20 GHz, respectively.

Ultra-Broadband Optical Filter Based on step-chirped Multimode Waveguide Bragg Grating

“…Figure. 4 shows the lateral misalignment Δs and the corresponding coupling coefficient к at 1550 nm along the propagation direction for different apodization strengths (i.e., b = 5/10/15). By tuning the apodization strength b, the shape of the coupling coefficient curve can be manipulated.…”

“…Meanwhile, silicon photonics has emerged as a potential optical interconnection technology due to its low cost, high integration and compatibility with complementary metal oxide semiconductor (CMOS) process. Various compact silicon photonic integrated devices have been successfully developed, including active components such as Si/Ge photodetectors [2][3][4], Si/Ⅲ-Ⅴ lasers [5,6], and siliconbased modulators [7][8][9], as well as passive devices such as silicon optical filters [10,11] and mode multiplexers [12]. Silicon optical filters have been well studied as key devices in wavelength division multiplexing (WDM) systems.…”

High-power traveling wave photodetector with monolithically integrated bias circuitry network on a silicon photonics platform

“…The injected light couples into the device by a fiber grating couple, and then is fed into PD units uniformly by cascaded MMI to avoid the saturation of individual PD unit. With the aid of the simulation model in our previous work [9,10], the optical delay lines are cancelled in our device because the distance of adjacent PDs is far short compared with the RF wavelength so that the propagation induced phase change is insignificant. In order to improve the bandwidth, the PD units are aperiodically loaded on the TW electrode.…”