Silicon‐based light emitting diode material studied under high pressure

Abstract

PACS 62.50.+p, 78.55.Ap, 85.60.Bt The influence of pressure up to around 30 kbar on the photoluminescence (PL) of material from a silicon light-emitting diode (LED) that operates efficiently at room temperature is reported for the first time. The observed PL peak at 1140 nm shifts to lower energy at a rate of -1.4 ± 0.1 meV/kbar. The value of this shift agrees with earlier absorption measurements on the indirect band-gap of silicon, confirming that the emission is closely related to this transition. This peak shows an increase in intensity from low to room temperature and peak position temperature results are compared to other sources.

Photoluminescence in implanted and doped silicon near room temperature

“…There have been almost no detailed measurements of the temperature dependence of photoluminescence (PL) in Si crystals, exhibiting an indirect optical transition at high temperatures (around room temperature), because of the weakness of the PL. Recently, electroluminescence (EL) was observed by Homewood and co-workers [1], and PL was investigated by Prins et al [2] and by Ishibashi et al [3] in boron-implanted Si. Photoluminescence enhancement in EL devices was explained as follows: near the boron-implanted surface of Si, the dislocation loops introduce a local strain field, which modifies the band structure and provides spatial confinement of charge carriers in the non-defective region near the surface.…”