Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed

PACS 62.50.+p, 78.55.Ap, 85.60.Bt The influence of pressure up to around 30 kbar on the photoluminescence (PL) of material from a silicon light-emitting diode (LED) that operates efficiently at room temperature is reported for the first time. The observed PL peak at 1140 nm shifts to lower energy at a rate of -1.4 ± 0.1 meV/kbar. The value of this shift agrees with earlier absorption measurements on the indirect band-gap of silicon, confirming that the emission is closely related to this transition. This peak shows an increase in intensity from low to room temperature and peak position temperature results are compared to other sources.