Silicon-Based On-Chip Tunable High-Q-Factor and Low-Power Fano Resonators with Graphene Nanoheaters

Abstract

Tunable and low-power microcavities are essential for large-scale photonic integrated circuits. Thermal tuning, a convenient and stable tuning method, has been widely adopted in optical neural networks and quantum information processing. Recently, graphene thermal tuning has been demonstrated to be a power-efficient technique, as it does not require thick spacers to prevent light absorption. In this paper, a silicon-based on-chip Fano resonator with graphene nanoheaters is proposed and fabricated. This novel Fano structure is achieved by introducing a scattering block, and it can be easily fabricated in large quantities. Experimental results demonstrate that the resonator has the characteristics of a high quality factor (∼31,000) and low state-switching power (∼1 mW). The temporal responses of the microcavity exhibit qualified modulation speed with 9.8 μs rise time and 16.6 μs fall time. The thermal imaging and Raman spectroscopy of graphene at different biases were also measured to intuitively show that the tuning is derived from the joule heating effect of graphene. This work provides an alternative for future large-scale tunable and low-power-consumption optical networks, and has potential applications in optical filters and switches.

High-transmission and large group delay terahertz triple-band electromagnetically induced transparency in a metal-perovskite hybrid metasurface

“…Many modulation strategies, such as mechanical reconfiguration, active materials, and emerging tuning strategies and materials, are proposed in EIT metasurface. [20][21][22][23][24] Mechanical reconfiguration includes thermo-mechanical tuning, electro-mechanical tuning, and opto-mechanical tuning. Active materials include varactor diode, semiconductors, liquid crystal, chalcogenide phase change materials, superconductors, and two-dimensional materials.…”

Coherent Control of the Goos-Hänchen Shift in a Cavity Containing a Five-Level Double-Ladder Atomic System

“…This lateral shift is known as the Goos-Hänchen (GH) shift, which was discovered by F. Goos and H. Hänchen in 1947 and theoretically explained by Artmann in 1948. Since then the GH shift has been studied in various structures containing different kinds of media [1]- [12], such as in a weakly absorbing semi-infinite medium [1], [2], negative refractive media [3], [4], photonic crystals [5]- [8], dielectric slab [9], [10], the ballistic electrons in semiconductor quantum slabs or well [11], [12], optical biosensor [13], metamaterial absorbers [14], various level configurations quantum systems [15], [16], semiconductor structure [17], [18], structures containing graphene [19]- [21], and others. However, in all those aforementioned studies, the manipulation of the GH shift cannot be performed on the fixed structures.…”