Silicon-Based Optoelectronics

Abstract

The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the development of efficient optical functions and their integration with state-of-the-art electronic functions. Silicon is the material of choice for reliable and low-cost optoelectronic integrated circuits because it is the leading semiconductor in the electronic arena and since a wellestablished processing technology exists for this material. However Si is characterized by an indirect bandgap and by a weak electro-optic effect. It is therefore not suitable for the implementation of fundamental optical functions such as light emission and modulation. At the moment, hybrid integration of compound-semiconductor optical functions with Si electronic functions is providing the gateway from electronic to photonic technology. However several strategies are being considered to engineer the optical functions of Si and to realize fully Si-based or at least Si-compatible optoelectronics.

Microscopic Structure of Er-Related Optically Active Centers in Crystalline Silicon

“…1. We note that also the (broad) PL spectra observed in Er-implanted samples usually have maxima located at this wavelength [3,8]. Consequently, our findings are important for understanding of the optical activity of Si:Er in general.…”

“…Also, Si:Er light emitting structures are attractive in association with potential applications for optical interconnects in future photonic chip technology. As a result of a continuing research effort Si:Er-based light emitting diodes have now been successfully developed-for an upto-date review, see, e.g., [3]. A further increase of emission efficiency and thermal stability by materials engineering is, however, obstructed by the apparent lack of understanding of more fundamental aspects related to the optical activity of Er 3 ions in Si.…”

Panoscopic Silicon—A Material for “All” Length Scales

“…This is a challenging size range for planar silicon processing methods and entry to materials with useful luminescence behavior requires the use of other approaches such as electrochemical anodic oxidation of p-doped silicon wafers. [3] The current consensus is that luminescence from silicon nanostructures originates from spatial confinement of photolytically or electrically generated electrons and holes and the resulting enhanced probability of radiative recombination. At minute dimensions the spatial confinement of electrons transforms the continuous electronic band structure of bulk silicon to one based upon discrete electronic energy levels.…”

Effect of grain size and hydrogen passivation on the electrical properties of nanocrystalline silicon films

“…Intrinsic and Er-doped nanocrystalline silicon (nc-Si) have been attracting high interest of researchers as promising candidates for the realization of Si-based visible and infrared light sources, in particular, for optical communication systems [1]. This interest has been increased by the recent development of all-Si Raman laser [2] and the observation of strong enhancement of the Raman scattering intensity in nc-Si as compared to the bulk material [3].…”