2019
DOI: 10.1364/oe.27.000a51
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Silicon based photoelectrodes for photoelectrochemical water splitting

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Cited by 75 publications
(73 citation statements)
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“…An efficiency analysis of these dual semiconductor systems has demonstrated that the optimal bandgap is ≈1–1.4 eV for the bottom absorber and ≈1.7–2.1 eV for the top absorber 1–3. Among semiconductors that exhibit an adequate bandgap, silicon (bandgap of 1.1 eV) has emerged as a promising choice due to its earth‐abundance and wide‐spread use in the electronics and solar cell industry 4–8. A common strategy to obtain high photovoltage with Si has been to fabricate traditional p–n Si homojunctions 9–13.…”
Section: Introductionmentioning
confidence: 99%
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“…An efficiency analysis of these dual semiconductor systems has demonstrated that the optimal bandgap is ≈1–1.4 eV for the bottom absorber and ≈1.7–2.1 eV for the top absorber 1–3. Among semiconductors that exhibit an adequate bandgap, silicon (bandgap of 1.1 eV) has emerged as a promising choice due to its earth‐abundance and wide‐spread use in the electronics and solar cell industry 4–8. A common strategy to obtain high photovoltage with Si has been to fabricate traditional p–n Si homojunctions 9–13.…”
Section: Introductionmentioning
confidence: 99%
“…
and solar cell industry. [4][5][6][7][8] A common strategy to obtain high photovoltage with Si has been to fabricate traditional p-n Si homojunctions. [9][10][11][12][13] Furthermore, significant effort has been focused on improving catalytic activity [14][15][16][17][18] of electrocatalysts attached to Si and increasing solar utilization by nanostructuring Si and/or introducing plasmonic materials.
…”
mentioning
confidence: 99%
“…As demonstrated previously, unprecedentedly high charge separation and transport efficiency could be realized through manipulating the interfacial energy levels among some Si heterojunction photoanodes. Unfortunately, their stability remains a problem . And therefore, great efforts are still urgently needed to simultaneously provide the Si photoanode with high efficiency and long‐term durability for water oxidation, in order to enable its practical application.…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, their stability remains a problem. [5,[13][14][15][16][17][18] And therefore, great efforts are still urgently needed to simultaneously provide the Si photoanode with high efficiency and long-term durability for water oxidation, in order to enable its practical application. This paper describes the design and fabrication of a highquality n-Si/SiO x /Al 2 O 3 /Ni/NiO x /NiOOH junction photoanode with high efficiency and stability for PEC water oxidation in alkaline solutions.…”
mentioning
confidence: 99%
“…The effective and low-cost production of this gas energy source without spending natural hydrocarbon raw materials largely determines the successful development and implementation of alternative (green/hydrogen) energetics. A significant reduction in energy consumption during the hydrogen evolution by photo-activated electrolysis is dependent on the success of the development and creation of new efficient non-precious electrocatalysts and photo-electrocatalysts, the manufacture of which does not use expensive materials (platinum group metals) [1,2,3,4,5,6]. Recently, a motivated interest has been formed in nanostructured and hybrid materials containing chalcogenides, phosphides, nitrides, carbides, or oxides of transitional metals [7,8,9,10,11,12].…”
Section: Introductionmentioning
confidence: 99%