Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Roelkens, Günther; Dave, Utsav D.; Gassenq, A.; Hattasan, Nannicha; Chen, Hu; Kuyken, Bart; Léo, François; Malik, Aditya; Muneeb, Muhammad; Ryckeboer, Eva; Sanchez, Dorian; Uvin, Sarah; Wang, Ruijun; Hens, Zeger; Baets, Roel; Shimura, Yosuke; Gencarelli, Federica; Vincent, Benjamin; Loo, Roger; Campenhout, Joris Van; Cerutti, L.; Rodriguez, J. B.; Tournié, E.; Chen, Xia; Nedeljkovic, Milos; Mashanovich, Goran Z.; Shen, Li; Healy, Noel; Peacock, Anna C.; Li, Xiaoping; Osgood, Richard M.; Green, William M. J.

doi:10.1109/jstqe.2013.2294460

Cited by 115 publications

(68 citation statements)

References 51 publications

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“…The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range [15][16][17] . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively.…”

Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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Direct bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and CMOS technology.Although a group IV direct bandgap material has not been demonstrated yet, silicon photonics using CMOS-compatible processes has made great progress through the development of Si-based waveguides 12 , photodetectors 13 and modulators 14 . The thus emerging technology is rapidly expanding the landscape of photonics applications towards tele-and data communication as well as sensing from the infrared to the mid infrared wavelength range 15-17 . Today's light sources of such systems are lasers made from direct bandgap group III-V materials operated off-or on-chip which requires fibre coupling or heterogeneous integration, for example by wafer bonding 3 , contact printing 4,5 or direct growth 6,7 , respectively. Hence, a laser source made of a direct bandgap group IV material would further boost lab-on-a-chip and trace gas sensing 15 as well as optical interconnects 18 by enabling monolithic integration. In this context, Ge plays a prominent role since the conduction band minimum at the -point of the Brillouin-zone (referred to as -valley) is 3 located only approx. 140 meV above the fourfold degenerate indirect L-valley. To compensate for this energy difference and thus form a laser gain medium, heavy n-type doping of slightly tensile strained Ge has been proposed 19 . Later, laser action has been reported for optically 20 and electrically pumped Ge 21 doped to approx. 1 and 4×10 19 cm -3 , respectively. However, pump-probe measurements of similarly doped and strained material did not show evidence for net gain 22 , and in spite of numerous attempts, researchers failed to substantiate above results up to today. Other investigated concepts concern the engineering of the Ge band structure towards a direct bandgap semiconductor using micromechanicallystressed Ge nanomembranes 9 or silicon nitride (Si 3 N 4 ) stressor layers 23 . Very recently, Süess et al. 10 presented a stressor-free technique which enables the introduction of more than 5.7 % 24 uniaxial tensile strain in Ge µ-bridges via selective wet under-etching of a pre-stressedlayer. An alternative technique in order to achieve direct bandgap material is to incorporate Sn atoms into a Ge lattice, which primarily reduces the gap at the -point. At a sufficiently high fraction of Sn, the energy of the -valley decreases below that of the L-valley. This indirect-to-direct transition for relaxed GeSn binaries has been predicted to occur at about 20 % Sn by Jenkins et al. 25 , but more recent calculations indicate much lower required Sn concentrations in the range of 6.5-11.0 % 26,27 . A major challenge for the realization of such GeSn alloys is the low (< 1 %) equilibrium solubility of Sn in Ge 28 and the large lattice mismatch of about 15 % between Ge and -Sn. For GeSn grown on Ge substrates, this mismatch induces biaxial compressive strain causing a shift of the  and L-valley crossover towards higher Sn concentrations ...

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Section: Direct Bandgap Group IV Materials May Thus Represent a Pathwmentioning

confidence: 99%

Lasing in direct-bandgap GeSn alloy grown on Si

et al. 2015

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“…For example, pulse mode laser emission up to 4-μm wavelength at room temperature was recently demonstrated utilizing GaSb type-II quantum well structures [74]. Several instances of heterogeneous integration of III-V mid-IR diode lasers and amplifiers with Si waveguides have been reported, including InP-based FabryPerot (F-P) and DFB lasers emitting at 2.0 μm [75] and 2.3 μm [76,77], GaSb-based F-P laser operating at 2.38 μm [78], and InP-based optical amplifier at 2.0 μm [79]. Figure 5 depicts the structure of an InP-based multi-quantum-well (MQW) F-P laser on Si emitting at 2.3 μm [76], which exemplifies a large class of heterogeneously integrated III-V lasers.…”

Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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“…This ensures that the laser operates in a single longitudinal mode and in combination with the gain bandwidth of the strained quantum well-based SOAs it achieves a tuning range of 31 nm. To our knowledge, such a tuning range exceeds those provided by other monolithic semiconductor devices reported in literature [6,14,15,24,25], be it PICs realized in monolithic [18,19] or hybrid technologies [4,26].…”

Section: Introductionmentioning

confidence: 72%

“…A trace analysis of such gas species is important in a wide range of applications including environmental monitoring in agriculture, process control in chemical and pharmaceutical plants and laboratories, atmospheric pollution monitoring, and for medical monitoring and diagnosis. Furthermore, the use of a monolithic photonic integration technology allows for the co-integration of several sources and detection subsystems on a single chip making it particularly attractive for multispecies gas detection systems where the complexity and size of bulk optics-based solutions are in many cases prohibitive factors [2,4].…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated widely tunable laser source operating at 2 μm

Latkowski¹,

Hänsel²,

Veldhoven³

et al. 2016

Optica

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We present a widely tunable extended cavity ring laser operating at 2 μm that is monolithically integrated on an indium phosphide substrate. The photonic integrated circuit is designed and fabricated within a multiproject wafer run using a generic integration technology platform. The laser features an intracavity tuning mechanism based on nested asymmetric Mach-Zehnder interferometers with voltage controlled electro-refractive modulators. The laser operates in a single-mode regime and is tunable over the recorded wavelength range of 31 nm, spanning from 2011 to 2042 nm. Its capability for high-resolution scanning is demonstrated in a single-line spectroscopy experiment using a carbon dioxide reference cell.

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Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range

Cited by 115 publications

References 51 publications

Lasing in direct-bandgap GeSn alloy grown on Si

Lasing in direct-bandgap GeSn alloy grown on Si

Mid-infrared integrated photonics on silicon: a perspective

Monolithically integrated widely tunable laser source operating at 2 μm

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