Silicon Carbide BioMEMS

Zorman, Christian A.; Barnes, Andrew

doi:10.1016/b978-0-12-385906-8.00010-6

Cited by 5 publications

(13 citation statements)

References 57 publications

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“…It was found that the membranes were able to pass proteins with molecular weights of up to 29 kDa and were able to exclude proteins in excess of 45 kDa. Moreover, the porous SiC membranes exhibited lower protein absorption as compared to commercially available polymer-based membranes specifically designed for protein absorption, indicating the potential for SiC membranes in biofilteration applications [13].…”

Section: Biofiltrationmentioning

confidence: 99%

“…Examples include RF switches and accelerometers [12]. Amorphous-SiC films deposited by PECVD generally exhibit a very wide range of residual stress (typically compressive in as-deposited films) that exhibit a strong dependence on deposition conditions [13].…”

Section: Physics and Technology Of Silicon Carbide Devicesmentioning

confidence: 99%

“…The principal factor affecting yield is wafer bowing due to high tensile residual stress in the 3C-SiC films. The techniques developed for Si bulk micromachining, including photoelectrochemical etching, DRIE, and laser micromachining, have been successfully adapted for SiC albeit typically with much lower etch rates [13]. Among the first SiC MEMS structures to be routinely fabricated were diaphragms, cantilever beams, and related structures fabricated out of single crystalline 3C-SiC films by silicon anisotropic etching.…”

Section: Bulk Micromachiningmentioning

confidence: 99%

“…The wide bandgap, combined with chemical inertness, result in SiC being the best material for gas sensing in harsh environments or at high temperatures. Thin film silicon carbide exhibits thermal conductivity on the same order of single crystalline silicon and has a fast thermal response [13]. MEMS-based microprobes for neural interfacing and biosensing applications are currently the subject of intense research due to the promise of achieving high functionality in a minimally invasive form-factor.…”

Section: Biosensorsmentioning

confidence: 99%

“…Under the proper conditions, the pore size and porosity of the resulting structures offer the potential to use porous SiC in biofiltration applications. For biofilteration applications, the porous material was formed by bulk electro-chemical etching of p-type and n-type, 6H-SiCsubstrates [13]. Rosenbloom et al reported the development of porous SiC membranes for use as protein filters [46].…”

Section: Biofiltrationmentioning

confidence: 99%

See 4 more Smart Citations

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Mahmoodi¹,

Ghazanfari²

2012

Physics and Technology of Silicon Carbide Devices

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Section: Biofiltrationmentioning

confidence: 99%

Section: Physics and Technology Of Silicon Carbide Devicesmentioning

confidence: 99%

Section: Bulk Micromachiningmentioning

confidence: 99%

Section: Biosensorsmentioning

confidence: 99%

Section: Biofiltrationmentioning

confidence: 99%

See 3 more Smart Citations

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Mahmoodi¹,

Ghazanfari²

2012

Physics and Technology of Silicon Carbide Devices

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The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes

Nasir

Leech

Reeves

et al. 2014

AMM

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In this paper, membranes of 3C-SiC with dimensions up to 10 mm x 15 mm2 have been fabricated in epitaxial 3C-SiC/ Si wafers by the means of photolithography, reactive ion etching of 3C-SiC and wet etching of Si. Scanning electron microscope (SEM) micrographs were used to observe the structure of the membrane and the wall formed by the Si wet etching. The quality of the 3C-SiC membranes were observed using Raman Spectroscopy. The remains of <111> Si substrate which was unetched during the Si wet etching were presented with the formation of microstructure defects which showed distinct peaks in comparison to the high quality 3C-SiC membranes at different position. Here, the effect of the membrane fabrication procedures to the 3C-SiC membrane properties especially the morphological structure and its Raman characteristics is discussed in detail.

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Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

Nasir

Zaaba

Zuki

et al. 2014

AMM

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Abstract. In this paper, the effect of inert gas plasma to the morphology of 0.29µm thick 3C-SiC/Si is studied. Helium was used for the plasma treatment and its effect as the etchant gas to the polished side of 3C-SiC/Si surface was determined. The changes of the surface morphology were monitored using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From the results obtained, it has shown that the morphology of surface properties of 3C-SiC was modified by differences in helium plasma time of exposure and the degree of roughness of the surface changes. The results show by the SEM and AFM shown that plasma treatment had been successfully implemented for the 0.29µm thick 3C-SiC/Si.

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Silicon Carbide BioMEMS

Cited by 5 publications

References 57 publications

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

Silicon Carbide: A Biocompatible Semiconductor Used in Advanced Biosensors and BioMEMS/NEMS

The Study of Morphological Structure and Raman Spectra of 3C-SiC Membranes

Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

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