Silicon Carbide High Temperature Operational Amplifier

Abstract

Development of silicon carbide operational amplifier offers an attractive alternative building block for the replacement of silicon and silicon-on-insulator analog circuits in harsh environment applications. NMOS-based enhancement mode silicon carbide device technology was utilized to demonstrate feasibility of operational amplifiers for use in harsh environment applications. This study reports on the results of characterization of operational amplifiers at room temperature and high temperatures up to 350°C. The development of high temperature packaging techniques enabled assembly of a functional oscillator board tested up to 350°C. A test fixture with high temperature sockets enabling quick swap of operational amplifiers is also discussed as an important tool in high temperature electronics research and development.

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

“…The measured low offset and high linearity of this amplifier demonstrates that the SiC BJT technology is suitable for front-end sensor circuits for high-temperature applications. [4] 300 76 3000 0.6@50ºC;25@300ºC 6H-SiC NMOS [7] 300 53 269 -4H-SiC NMOS [8] 350 60 ~200 35@27ºC;150@350ºC 4H-SiC NMOS [9] 300 42 ~100 -4H-SiC NMOS [10] 500 55 ~1000 -6H-SiC JFET [11] 576 69 1400 *…”

Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

“…It has been previously reported that for MOSFET based integrated circuits, all-FET design is advantageous compared to the enhancement mode MOSFET and n-channel resistors because for the all-FET design, the device parameters were found to drift in the same direction with temperature. This led towards a robust design capable of stable operation over a wide temperature range [7]. Therefore, in this letter, a ring oscillator circuit and op-amp were designed using the all enhancement mode NMOS approach.…”

“…Finally, a titanium, tungsten and gold metal stack was deposited as bond pad contacts and metal interconnects. The design and fabrication of the SiC integrated circuits followed techniques outlined in [7]. It has been previously reported that for MOSFET based integrated circuits, all-FET design is advantageous compared to the enhancement mode MOSFET and n-channel resistors because for the all-FET design, the device parameters were found to drift in the same direction with temperature.…”