Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

Ghandi, Reza; Chen, Cheng-Po; Yin, Liang; Zhu, Xingguang; Yu, Libing; Arthur, Steve; Ahmad, Faisal; Sandvik, Peter

doi:10.1109/led.2014.2362815

Cited by 32 publications

(13 citation statements)

References 8 publications

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“…Up to 300 ºC, Si-based CMOS amplifiers [3], [4] have demonstrated higher gain and gain-bandwidth than those in SiC NMOSFET [7]- [10]. Above 300 ºC, SiC dominates, and compared to the SiC JFET amplifier [11], lower offset and higher gain-bandwidth have been achieved in this work.…”

Section: B Open-loop Measurementmentioning

confidence: 59%

“…The measured low offset and high linearity of this amplifier demonstrates that the SiC BJT technology is suitable for front-end sensor circuits for high-temperature applications. [4] 300 76 3000 0.6@50ºC;25@300ºC 6H-SiC NMOS [7] 300 53 269 -4H-SiC NMOS [8] 350 60 ~200 35@27ºC;150@350ºC 4H-SiC NMOS [9] 300 42 ~100 -4H-SiC NMOS [10] 500 55 ~1000 -6H-SiC JFET [11] 576 69 1400 *…”

Section: Discussionmentioning

confidence: 99%

“…Its bandgap is almost three times that of Si, which results in low intrinsic carrier concentration, orders of magnitude lower than that of Si [1]. High-temperature MOSFET SiC amplifiers have been demonstrated in [7]- [10], in which the maximum operation temperature is 500 °C [10]. On the other hand, JFET SiC amplifiers can operate stably at ambient temperature up to 576 °C [11], [12] by eliminating gate oxide.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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Abstract-This paper presents a monolithic fully-differential amplifier implemented in a low-voltage 4H-SiC BJT technology. The circuit has been designed considering the variation of device parameters over a large temperature range. A base-current compensation technique has been applied to overcome the low input-resistance of the amplifier. The bare chip of the amplifier has been measured from 27 ºC to 500 ºC using a hot-chuck probe station. Its open-loop gain is 58 dB at 27 ºC, and monotonically decreases to 37 dB at 500 ºC. Its closed-loop gain reduction is around 5 dB over the investigated temperature range. The gain-bandwidth product drops from 2.8 MHz at 27 ºC to 1.3 MHz at 500 ºC with 470 pF off-chip compensation capacitors. A low total-harmonic-distortion of -58.4 dB at 27 ºC and -46.9 dB at 500 ºC is achieved due to the fully-differential implementation. A low input offset voltage of 0.5 mV at 27 ºC and 6.9 mV at 500 ºC is achieved without calibration. The relative high linearity and low offset demonstrate the potential of this technology to be further investigated for front-end sensor circuits in high-temperature applications.

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Section: B Open-loop Measurementmentioning

confidence: 59%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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“…The SOI technology can also be used to develop high-temperature drive ICs, but the manufacturing process is complicated and associated with the high cost. The gate drive ICs based on SiC technology can operate reliably at the temperature of 400 °C, and it has been reported in [51,52,53,54]. However, this technology is not mature and commercialized yet.…”

Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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“…Due to the limitation of silicon (Si), silicon carbide (SiC) has attracted great deal of attention as a superior material for operation in harsh environments [8]- [11]. The wide band gap of SiC enables high temperature (above 300 • C) operation of SiC-based electronic devices, such as diodes and transistors [12]- [14]. The strong mechanical properties in SiC have also been utilized to improve the wear-resistance of devices which are coated with a thin layer of SiC [15].…”

Section: Introductionmentioning

confidence: 99%

Wireless Battery-Free SiC Sensors Operating in Harsh Environments Using Resonant Inductive Coupling

Phan

Nguyen

Dinh

et al. 2019

IEEE Electron Device Lett.

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Silicon carbide (SiC) has been extensively investigated in the last decade, specifically for applications in harsh environments. However, most SiC sensors require an external power supply which cannot operate at high temperatures. This work develops a new sensing technology in a SiC platform based on near field communication to eliminate the requirement for wired power sources. 3C-SiC temperature sensors were fabricated from a SiC-on-insulator substrate formed by anodic bonding. The sensors functioned based on the thermoresistance of the SiC films with the high TCR of-13,000 ppm/K at 300 K and-3,000 ppm/K at 600 K. The change in the resistance of the SiC sensors was wirelessly measured using a reading coil placed outside of the heating chamber, showing a significant shift in the resonant frequency (-400 ppm/K at 600 K) of the couplingimpedance under the variation of temperatures. The proposed technique is promising for the development of wireless wideband-gap sensors used in extreme conditions.

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Silicon Carbide Integrated Circuits With Stable Operation Over a Wide Temperature Range

Cited by 32 publications

References 8 publications

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Wireless Battery-Free SiC Sensors Operating in Harsh Environments Using Resonant Inductive Coupling

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