Silicon carbide integrated circuits for extreme environments

Kashyap, Avinash S.; Chen, Cheng-Po; Ghandi, Reza; Patil, Amita; Andarawis, Emad; Yin, Liang; Shaddock, David; Sandvik, Peter; Fang, Kun; Shen, Zhenxing; Johnson, Wayne

doi:10.1109/wipda.2013.6695562

Cited by 29 publications

(8 citation statements)

References 9 publications

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“…The measured low offset and high linearity of this amplifier demonstrates that the SiC BJT technology is suitable for front-end sensor circuits for high-temperature applications. [4] 300 76 3000 0.6@50ºC;25@300ºC 6H-SiC NMOS [7] 300 53 269 -4H-SiC NMOS [8] 350 60 ~200 35@27ºC;150@350ºC 4H-SiC NMOS [9] 300 42 ~100 -4H-SiC NMOS [10] 500 55 ~1000 -6H-SiC JFET [11] 576 69 1400 *…”

Section: Discussionmentioning

confidence: 99%

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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Abstract-This paper presents a monolithic fully-differential amplifier implemented in a low-voltage 4H-SiC BJT technology. The circuit has been designed considering the variation of device parameters over a large temperature range. A base-current compensation technique has been applied to overcome the low input-resistance of the amplifier. The bare chip of the amplifier has been measured from 27 ºC to 500 ºC using a hot-chuck probe station. Its open-loop gain is 58 dB at 27 ºC, and monotonically decreases to 37 dB at 500 ºC. Its closed-loop gain reduction is around 5 dB over the investigated temperature range. The gain-bandwidth product drops from 2.8 MHz at 27 ºC to 1.3 MHz at 500 ºC with 470 pF off-chip compensation capacitors. A low total-harmonic-distortion of -58.4 dB at 27 ºC and -46.9 dB at 500 ºC is achieved due to the fully-differential implementation. A low input offset voltage of 0.5 mV at 27 ºC and 6.9 mV at 500 ºC is achieved without calibration. The relative high linearity and low offset demonstrate the potential of this technology to be further investigated for front-end sensor circuits in high-temperature applications.

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Section: Discussionmentioning

confidence: 99%

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian

Lanni

Rusu

2016

IEEE Trans. Electron Devices

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“…One of the most complicated circuits from that time was an integrated gate driver in 4H-SiC [12]. Over the last ten years, SiC ICs have seen a renewed interested with the endeavors focused on an all NMOS 4H-SiC process [13] and in some cases SiC JFETs [14] and MESFETs [15]. The bulk of this large-scale integration work has been aimed at supporting gate driver operation and protection, with the goal to support SiC power FETs in power electronics applications.…”

Section: A History Of Silicon Carbide Integrated Circuitsmentioning

confidence: 99%

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Rahman

Roy

Murphree

et al. 2016

IEEE J. Emerg. Sel. Topics Power Electron.

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1 1 Abstract-This paper describes a high temperature voltage comparator and an operational amplifier in a 1.2 µm silicon carbide CMOS process. These circuits are used as building blocks for designing a high temperature SiC low-side over current protection circuit. The over current protection circuit is used in the protection circuitry of a SiC FET gate driver in power converter applications. The op amp and the comparator have been tested at 400 °C and 550 °C temperature respectively. The op amp has an input common-mode range of 0-11.2 V, DC gain of 60 dB, unity gain bandwidth of 2.3 MHz and a phase margin of 48° at 400 °C. The comparator has a rise time and a fall time of 38 ns and 24 ns, respectively, at 550 °C. The over current protection circuit, implemented with these analog building blocks, is designed to sense a voltage across a sense resistor up to 0.5 V. Keywords-comparator, op amp, current sensor, silicon carbide, high temperature electronics, wide bandgap ICs. I.K. Addington is with the

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“…This has driven current integrated circuits research to focus on basic building block circuits such as operational amplifiers and digital circuits [12]. An under voltage lockout (UVLO) circuit has been reported in the all-NMOS Cree SiC process [13] as a protection circuit for the integrated gate driver.…”

Section: Sic Ic Design Backgroundmentioning

confidence: 99%

A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics

Rahman

Shepherd

Bhuyan

et al. 2015

2015 IEEE Aerospace Conference

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This paper describes the simulation and test results of a family of analog and mixed signal circuits in silicon carbide CMOS technology at temperatures of 300⁰ ⁰ ⁰ ⁰C and above. As SiC and wide bandgap devices in general grow in popularity for efficient and stable operation in high temperature and harsh environment applications, CMOS SiC integrated circuits can open up a new frontier of opportunity for miniaturization and system dependability. The building block circuits presented here can serve as the basis of rugged SiC system-on-chips for extreme environment applications.

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Silicon carbide integrated circuits for extreme environments

Cited by 29 publications

References 9 publications

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics

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