Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model

Salah, Tarek Ben; Khachroumi, Sofiane; Morel, Hervé

doi:10.1049/iet-pel.2010.0337

Cited by 5 publications

(4 citation statements)

References 21 publications

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“…Therefore we have extrapolated the manufacturer's curve by means of a polynomial function of I DS in order to obtain the values of E ON and E OFF at low current levels. Equations (6) and 7show the respective polynomial functions for E ON (I DS ) and E OFF (I DS ), that are calculated using a polynomial fitting with MATLAB, which yields the values of the coefficients shown in Table 2 E…”

Section: Semiconductor Switching Lossesmentioning

confidence: 99%

“…Different studies and experiments over the last years demonstrate the progressive penetration of SiC devices in switching converters and show that some of these components have already reached enough technological maturity to constitute their own market niche. One of the most representative examples of this maturity is the junction field-effect transistor (JFET) , whose behaviour has been the subject of recent publications [6][7][8][9][10], some reports having disclosed specific gate drivers for JFETs [11,12] and shown its utility in cascode rectifier structures [13,14]. Other reports demonstrate that JFETs can work with higher power densities and higher switching frequencies and result in better efficiencies than the Si equivalent implementations [15].…”

Section: Introductionmentioning

confidence: 99%

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Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

León-Masich

Valderrama-Blavi

Bosque-Moncusí

et al. 2015

IET Power Electronics

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An efficiency comparison between a boost converter implemented with silicon (Si) devices and the same converter implemented in the other three cases, that is, employing two combinations of silicon carbide (SiC) devices and a mixture of Si and SiC elements is presented. The converter has been designed for high-voltage low-power applications required by light-emitting diode (LED) lighting. The comparison is performed on an equal basis and discusses the influence on the converter efficiency of the semiconductor power devices and the passive components. The experiments are carried out in a single-stage boost converter prototype delivering a maximum output voltage of 1200 V when supplied by a 12 V battery. The measurements show that the highest efficiency is obtained when the power transistor is implemented by a normally-off junction field-effect transistor and the diode by a SiC Schottky device with a small parasitic capacitance. The implementation with the highest efficiency has been selected for supplying a light spot of 320 LEDs in series, which results in an output voltage of 956 V and an output power of 20.6 W.

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Section: Semiconductor Switching Lossesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

León-Masich

Valderrama-Blavi

Bosque-Moncusí

et al. 2015

IET Power Electronics

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show abstract

“…Throughout their history, transistors have been under intensive investigation due to their suitability to many applications, including converters, power switches, amplification, modulation, logic gates, cryogenic operation, and integrated circuits [7][8][9][10]. AC operation of transistors is a desirable characteristic for applications in PE, power switching, energy harvesting, radio-frequency identification, machine drive, near field communication, as well as for electroluminescence and printable LCD displays [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Switching alternating current (AC) using a fully screen‐printed current‐driven transistor

Zambou

Azeutsap²,

Nuessl

et al. 2018

IET power electron.

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The authors report on a large area, fully screen-printed transistors, using nanostructured silicon as the active material. The transistors are produced by simple screen printing processes under ambient conditions without the need for postprocessing steps. The devices can be operated as two-way switches both with a direct or alternating current (AC). The authors demonstrated the operation of the devices printed on flexible substrates (office paper 80 g/m 2) using silver as the conductive electrodes and highly doped p-type nanostructured silicon as the active layer. A method of switching sinusoidal AC using a single printed transistor is demonstrated at a frequency of 50 Hz at ambient condition. The silicon used as active materials, present domains, and blocks at a microscopic level, with an electric behaviour similar to one of the varistor-like components used as surge suppressors. So, unlike conventional transistors which rely on electric field modulation or charge injection, these AC switches operate by activation transport of charge carriers in the active silicon layer. Switching AC is achieved by applying a signal to the base which results in a change of the current's direction from between the collector and base to between the base and emitter.

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“…SiC semiconductor material is superior because of its outstanding wide bandgap and high thermal conductivity. Therefore SiC power devices are very suitable for the high temperature, high frequency and high power applications [1][2][3][4][5][6]. For the JBS rectifier, it behaves some superior performance such as high reverse bias voltage and low-leakage current, which can be comparable with a silicon PiN diode.…”

Section: Introductionmentioning

confidence: 99%

Low‐leakage 4H‐SiC junction barrier Schottky rectifier with sandwich P‐type well

Wang

Miao

et al. 2015

IET Power Electronics

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4H-SiC junction barrier Schottky (JBS) rectifier with sandwich P-type well (SPW JBS) is investigated by simulation. For this structure, the top and bottom of P + grids are replaced by low-doped P (LDP) region based on the common JBS rectifier. The forward and reverse characteristics of SPW JBS rectifier have been compared with those of common JBS rectifier at different temperatures. The reverse current density of SPW JBS rectifier is about 2.4 × 10 −5 times of common JBS rectifier at −800 V bias voltage. The upper LDP of SPW JBS is helpful to give a reduction in forward voltage drop. The spreading current and tunnelling current of SPW JBS rectifier are lower, because the depletion layer width in lower LDP is larger than that in P + grid region at the same reverse voltage. As a result, the breakdown voltage of SPW JBS rectifier increases by 83.5% compared with that of common JBS rectifier. The on/off (1 V/ −500 V) current ratios of SPW JBS and common JBS rectifiers are 3.8 × 10 7 and 1.2 × 10 3 , respectively. In addition, the figure of merit of SPW JBS rectifier is 347, which is two times larger than that of common JBS rectifier.

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Silicon–carbide junction field effect transistor built-in diode: an experimentally verified electrical model

Cited by 5 publications

References 21 publications

Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

Efficiency comparison between Si and SiC‐based implementations in a high gain DC–DC boost converter

Switching alternating current (AC) using a fully screen‐printed current‐driven transistor

Low‐leakage 4H‐SiC junction barrier Schottky rectifier with sandwich P‐type well

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