Silicon Carbide Power Devices

Chow, T. Paul

doi:10.1016/b978-012265320-9/50074-x

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Cited by 7 publications

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“…An interpretation of the excess current in the diodes of the second group can be given by using the Space-Charge-Limited Current model [6,7,8]. In Fig.…”

Section: Resultsmentioning

confidence: 99%

Correlation between Current Transport and Defects in n<sup>+</sup>/p 6H-SiC Diodes

Canino

Castaldini

Cavallini

et al. 2006

MSF

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This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

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“…An interpretation of the excess current in the diodes of the second group can be given by using the Space-Charge-Limited Current model [6,7,8]. In Fig.…”

Section: Resultsmentioning

confidence: 99%