Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers

Zhu, Liang; Chow, T. Paul

doi:10.1109/ted.2008.926638

Cited by 70 publications

(35 citation statements)

References 14 publications

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“…and 4.4×10 7 (V/cm·(eV) 3/2 ), respectively, (see also [24] where a different set of these parameters was suggested). These values are within ~40% deviation from the theoretical values, which is acceptable considering the uncertainty of the electron effective mass at the SiC surface [23]. In the modeled JBS device, the p-wells are considered as highly doped with a p-doping level of 10 19 cm -3 .…”

Section: Simulation Results For Quasi-3d Tcad Modelsupporting

confidence: 53%

“…In the TCAD model, the relationship between the tunneling current density and the electric field is expressed in terms of the surface electric field and the Schottky barrier height, using the Fowler-Nordheim equation [23]. Following [23], the theoretical tunneling effective mass * can be calculated as 0.33 # for the current direction along the c-axis based on previously reported effective mass tensor values for 4H-SiC. Then the values for % and % are 3×10 -6 (A • eV/V . )…”

Section: Simulation Results For Quasi-3d Tcad Modelmentioning

confidence: 99%

See 1 more Smart Citation

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski

Arslanbekov

Raman

et al. 2018

IEEE Trans. Nucl. Sci.

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Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.Index Terms-Single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide.

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Section: Simulation Results For Quasi-3d Tcad Modelsupporting

confidence: 53%

Section: Simulation Results For Quasi-3d Tcad Modelmentioning

confidence: 99%

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski

Arslanbekov

Raman

et al. 2018

IEEE Trans. Nucl. Sci.

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“…The Figure 5 The relationship between the differential specific-on resistance and the forward voltage. relationship between the specific-on resistance and electron mobility for JBS is [14] on sp D n D n sub D n sub n…”

Section: Resultsmentioning

confidence: 99%

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Song

Yuan

Han

et al. 2015

Sci. China Technol. Sci.

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There is a great interest in monolithic 4H-SiC Junction Barrier Schottky (JBS) diodes with the capability of a high forward current for industrial power applications. In this paper, we report large-area monolithic 4H-SiC JBS diodes fabricated on a 10 µm 4H-SiC epitaxial layer doped to 6×10 15 cm 3 . JBS diodes with an active area of 30 mm 2 had a forward current of up to 330 A at a forward voltage of 5 V, which corresponds to a current density of 1100 A/cm 2 . A near ideal breakdown voltage of 1.6 kV was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings (MFGR) termination, which is about 87.2% of the theoretical value. The differential specific-on resistance (R SP-ON ) was measured to be 3.3 m cm 2 , leading to a FOM (VB 2 /R SP-ON ) value of 0.78 GW/cm 2 , which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-SiC unipolar devices. 4H-SiC, JBS, current capability, breakdown voltageCitation: Song Q W, Yuan H, Han C, et al. Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current. Sci China Tech Sci,

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“…13; at 25°C from 0 V to 500 V this is dominant. Above 150°C, the overall leakage current is exponentially dependent on temperature, showing that the leakage current is dominated by thermionic current, a phenomena already noted in Ref.…”

Section: Static Characteristics Up To 300°cmentioning

confidence: 88%

“…This behavior has already been reported by several authors. 13,14 The simulation was also performed for 6-kV structures with an epitaxial layer of 50 lm doped at 8 9 10 14 cm À3 .…”

Section: Forward Characteristicsmentioning

confidence: 99%

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

Berthou

Godignon

Montserrat

et al. 2011

Journal of Elec Materi

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Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with different geometries, and their forward characteristics were measured up to 300°C. The 1.7-kV diodes exhibited unipolar conduction up to 6 V at 275°C, whereas 6-kV diodes showed ideal on-resistance, R on . An optimized JBS design permits a higher breakdown voltage to be obtained than for the pure Schottky diode, with a reasonable increase (10%) of the on-resistance. Results demonstrate the feasibility of tungsten JBS diodes for fast-switching, high-voltage, and high-temperature applications.

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Analytical Modeling of High-Voltage 4H-SiC Junction Barrier Schottky (JBS) Rectifiers

Cited by 70 publications

References 14 publications

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

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