2019
DOI: 10.1109/mmm.2019.2928675
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Silicon-Ceramic Composite Substrate: A Promising RF Platform for Heterogeneous Integration

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Cited by 6 publications
(7 citation statements)
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“…The later interface side is structured by etching with Potassium hydroxide solution (KOH) to generate 800 µm x 800 µm cavities with a membrane thickness of around 50 µm (3). Black silicon can be applied additionally onto the interface-side to enhance the bond strength [6]. To improve wetting [7] of the bondinterface a ~25 nm titanium is applied on the Si-wafer and thermally oxidized to ~50 nm thick titanium oxide.…”
Section: A Previous Manufacturing Methodsmentioning
confidence: 99%
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“…The later interface side is structured by etching with Potassium hydroxide solution (KOH) to generate 800 µm x 800 µm cavities with a membrane thickness of around 50 µm (3). Black silicon can be applied additionally onto the interface-side to enhance the bond strength [6]. To improve wetting [7] of the bondinterface a ~25 nm titanium is applied on the Si-wafer and thermally oxidized to ~50 nm thick titanium oxide.…”
Section: A Previous Manufacturing Methodsmentioning
confidence: 99%
“…To improve wetting [7] of the bondinterface a ~25 nm titanium is applied on the Si-wafer and thermally oxidized to ~50 nm thick titanium oxide. [4], [6] The LTCC process begins with cutting the tape in the required processable size (115 mm x 115 mm) with consideration of the casting direction. This is necessary to compensate the casting direction related shrinkage deviation.…”
Section: A Previous Manufacturing Methodsmentioning
confidence: 99%
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“…Thermal bonding of silicon and LTCC at sintering temperatures of 900 • C represents currently the standard process in silicon-ceramic composite (SiCer) substrate fabrication [3]. A quasi-monolithic SiCer substrate can be made by co-sintering of LTCC and silicon while basic functionalities regarding electrical connections from LTCC to silicon can be implemented using through silicon vias [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…Due to the initially required relatively high sintering pressures in the range of 800 kPa, investigations on wetting promoting layers were triggered to lower the required pressure. Intermediate TiO 2 thin layers appear, for instance, to reduce the needed sintering pressure dramatically [6] leading the so-called pressureassisted sintering with pressure of as low as 3 kPa [3]. The benefits of SiCer substrates are, for instance, demonstrated in radio frequency micro-electro-mechanical systems (RF-MEMS) applications [2,7].…”
Section: Introductionmentioning
confidence: 99%