Silicon-chromium thin-film resistor reliability

Waits, Robert K.

doi:10.1016/0040-6090(73)90172-7

Cited by 11 publications

(11 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In particular, vanadium (V) and chromium (Cr) doped Si clusters have attracted much attention as V-Si alloy nanoparticles can be potentially utilized for non-volatile memory devices, 34 and as Cr-Si alloy has been widely applied in making thin film resistors and sensors. [35][36][37] More recently, a promising catalytic performance of cage-like silicon clusters doped with one V atom, VSi 12-15 , with respect to carbon dioxide hydrogenation was predicted. 38 Clusters doped by V or Cr dimers have also already been studied theoretically.…”

Section: Introductionmentioning

confidence: 99%

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters

Wang

Yin

Jia

et al. 2022

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters

Wang

Yin

Jia

et al. 2022

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…Chromium, silicon, and their alloys are very important materials in the manufacture of thin film resistors and microelectronic devices. [51][52][53][54] It has been suggested that chromium silicide is a potentially important contact material in future nanosystems because chromium silicide nanostructures can reduce the energy barrier between the metal and semiconductor layers. 55 Chromium-doped silicon clusters have been studied by many researchers.…”

Section: Introductionmentioning

confidence: 99%

Structures and magnetic properties of CrSin− (n = 3–12) clusters: Photoelectron spectroscopy and density functional calculations

Kong

Zheng

2012

The Journal of Chemical Physics

View full text Add to dashboard Cite

Chromium-doped silicon clusters, CrSi(n)(-) (n = 3-12), were investigated with anion photoelectron spectroscopy and density functional theory calculations. The combination of experimental measurement and theoretical calculations reveals that the onset of endohedral structure in CrSi(n)(-) clusters occurs at n = 10 and the magnetic properties of the CrSi(n)(-) clusters are correlated to their geometric structures. The most stable isomers of CrSi(n)(-) from n = 3 to 9 have exohedral structures with magnetic moments of 3-5μ(B) while those of CrSi(10)(-), CrSi(11)(-), and CrSi(12)(-) have endohedral structures and magnetic moments of 1μ(B).

show abstract

“…For example, they can be applied in low-power monolithic and hybrid integrated circuits [12]. Also, Cr-Si-based thin-film resistors have the merits of high sheet resistance, low temperature coefficient of resistance (TCR), high thermal stability, good long-term reliability, and good chemical stability [13], respectively.…”

Section: Cmosmentioning

confidence: 99%

Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor

Cheng¹,

Chen²,

Li³

et al. 2016

MSA

View full text Add to dashboard Cite

At first, Cr-Si (28 wt% Cr, 72 wt% Si) and Ni-Cr (80 wt% Ni, 20 wt% Cr) thin-film materials were deposited by using sputtering method at the same parameters, and their physical and electrical properties were investigated. The resistances of Cr-Si and Ni-Cr thin-film resistors decreased with the increase of deposition time (thickness) and their resistivity had no apparent variations as the deposition time increased. The temperature coefficient of resistance (TCR) of single-layer Cr-Si thin-film resistors was negative and the TCR value of single-layer Ni-Cr thin-film resistors was positive. For that, we used Cr-Si thin films as upper (or lower) layer and Ni-Cr thin films as lower (upper) layer to investigate a bi-layer thin-film structure. The deposition time of Ni-Cr thin films was fixed at 10 min and the deposition time of Cr-Si thin films was changed from 10 min to 60 min. We had found that as Cr-Si thin films were used as upper or lower layers they had similar deposition rates. We had also found that the thickness and stack method of Cr-Si thin films had large effects on the resistance and TCR values of the bi-layer thin-film resistors.

show abstract

Silicon-chromium thin-film resistor reliability

Cited by 11 publications

References 1 publication

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters

Structures and magnetic properties of CrSin− (n = 3–12) clusters: Photoelectron spectroscopy and density functional calculations

Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor

Contact Info

Product

Resources

About

Silicon-chromium thin-film resistor reliability

Cited by 11 publications

References 1 publication

Anion photoelectron spectroscopy and density functional theory study of TM2Sin− (TM = V, Cr; n = 14–20) clusters

Anion photoelectron spectroscopy and density functional theory study of TM2Sin− (TM = V, Cr; n = 14–20) clusters

Structures and magnetic properties of CrSin− (n = 3–12) clusters: Photoelectron spectroscopy and density functional calculations

Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor

Contact Info

Product

Resources

About

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters

Anion photoelectron spectroscopy and density functional theory study of TM₂Si_n⁻ (TM = V, Cr; n = 14–20) clusters