Silicon dioxide thin film removal using high-power nanosecond lasers

Magyar, J.; Sklyarov, A.; Mikaylichenko, K.; Yakovlev, Vladislav V.

doi:10.1016/s0169-4332(02)01508-8

Cited by 11 publications

(6 citation statements)

References 19 publications

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“…1,2 Normally, such Si-NWs are obtained by oxidizing a large nanowire and subsequently removing the oxide layer. [3][4][5] Such oxidation can reduce the Si-NW diameter below the Bohr exciton radius to obtain visible photoluminescence due to quantum connement effects. Interestingly, in this case, the band gap becomes size dependent and increases as the size of the nanostructure decreases, which indicates the possibility of developing Si-NW materials with a controllable band gap.…”

Section: Introductionmentioning

confidence: 99%

Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires

et al. 2013

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The application of core-shell Si-SiO(2) nanowires as nanoelectronic devices strongly depends on their structure, which is difficult to tune precisely. In this work, we investigate the formation of the core-shell nanowires at the atomic scale, by reactive molecular dynamics simulations. The occurrence of two temperature-dependent oxidation mechanisms of ultra-small diameter Si-NWs is demonstrated. We found that control over the Si-core radius and the SiO(x) (x≤ 2) oxide shell is possible by tuning the growth temperature and the initial Si-NW diameter. Two different structures were obtained, i.e., ultrathin SiO(2) silica nanowires at high temperature and Si core|ultrathin SiO(2) silica nanowires at low temperature. The transition temperature is found to linearly decrease with the nanowire curvature. Finally, the interfacial stress is found to be responsible for self-limiting oxidation, depending on both the initial Si-NW radius and the oxide growth temperature. These novel insights allow us to gain control over the exact morphology and structure of the wires, as is needed for their application in nanoelectronics.

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Section: Introductionmentioning

confidence: 99%

Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires

et al. 2013

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“…[4][5][6] Furthermore, laser cleaning can be integrated into other cleaning methods to significantly enhance the cleaning efficiency. 9 For the opaque layer, if the applied laser intensity is too low to melt the layer, the thermal stress due to the very rapid heating of laser pulse is responsible for the layer removal. 8 For the transparent layer, such as silicon dioxide, the acoustic pulse induced by the absorption of the laser energy at the substrate/layer interface is the main power to remove the thin layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of pulsing parameters on laser ablative cleaning of copper oxides

Zhang

Wang

Cheng

et al. 2006

Journal of Applied Physics

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Articles you may be interested inAnalysis of the structure, configuration, and sizing of Cu and Cu oxide nanoparticles generated by fs laser ablation of solid target in liquidsThe characteristics of copper oxide removal are comparably investigated under different pulsing strategies. A two-dimensional model is utilized to numerically simulate the laser ablative cleaning process. In the model, property discontinuity and Stephan and kinetic boundary conditions are taken into account, and the moving phase interface in the material is evaluated with the enthalpy method. Experiments are carried out on copper samples having different oxide layer thicknesses. The copper oxide layer thicknesses determined by ellipsometer and the chemical constituents of the copper oxide layer determined via x-ray photoelectron spectroscopy are incorporated into this numerical model. Under the single-pulse irradiation strategy, a higher laser intensity threshold is determined by the model based on the criterion of removing the oxide film as much as possible without damaging the substrate. Under the multipulse irradiation strategy, a lower threshold is employed to remove the oxide layer, while the appropriate pulse numbers under different laser intensities and different laser pulse repetition rates are the key issues investigated. A reasonable agreement is obtained between the experimental and simulated results.

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“…The layered metamorphosed structures shown in Region IV can be found partly flake away from the surface, which is similar to the removal of SiO 2 thin films from silicon surface after the irradiation of high-energy long pulse lasers. [7] Plasma ejection in the laser irradiated area during the ablation led to strong shocks. The shocks propagated to the unirradiated area, which may be responsible for the desquamation phenomenon.…”

Section: Resultsmentioning

confidence: 99%

The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-Crystalline Silicon

Wang

Dong

Yang

et al. 2006

MSF

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Femtosecond laser pulses are irradiated on a single-side polished single-crystalline silicon wafer. Metamorphic zone appears around the ablated zone and the morphology changes gradually in the metamorphic zone. Typical phenomena of thermal ablation such as melt-resolidification and subtransparent glassy materials occur in the marginal area of the ablated zone. No apparent changes are found among microscopic morphologies of the ablated, metamorphic and unirradiated zones. There are flaws and spallations on the smooth back surface of the wafer, which are caused by the stress inside the sample. Nanomechanical properties of the sample surface hardly change in the small scope of the backside around the ablated zone. While regular changes occur in large scope, which is the conjunct result of such stresses caused by many different collateral damages.

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Silicon dioxide thin film removal using high-power nanosecond lasers

Cited by 11 publications

References 19 publications

Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires

Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires

Effect of pulsing parameters on laser ablative cleaning of copper oxides

The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-Crystalline Silicon

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Silicon dioxide thin film removal using high-power nanosecond lasers

Cited by 11 publications

References 19 publications

Reactive molecular dynamics simulations on SiO2-coated ultra-small Si-nanowires

Reactive molecular dynamics simulations on SiO2-coated ultra-small Si-nanowires

Effect of pulsing parameters on laser ablative cleaning of copper oxides

The Study of Collateral Damages in the Process of Femtosecond Laser Micromachining Single-Crystalline Silicon

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Product

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Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires

Reactive molecular dynamics simulations on SiO₂-coated ultra-small Si-nanowires