1997
DOI: 10.1016/s0022-0248(97)00245-5
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Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine

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Cited by 8 publications
(3 citation statements)
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“…It is higher than the reported electron concentration to date for n-type III-V semiconductor materials. [25][26][27] An apparent increase in the electron mobility was observed for the annealed C-doped InGaAsBi films with the carrier concentration lower than 10 19 cm −3 , and when the carrier concentration is greater than 10 19 cm −3 , the mobility has no obvious improvement. As-annealing treatment eliminates defects and improves the electrical properties of carbon-doped InGaAsBi films and, meanwhile, drives more C onto group-III sites as donors, which increases the electron concentration and mobility.…”
Section: Electrical Propertiesmentioning
confidence: 98%
“…It is higher than the reported electron concentration to date for n-type III-V semiconductor materials. [25][26][27] An apparent increase in the electron mobility was observed for the annealed C-doped InGaAsBi films with the carrier concentration lower than 10 19 cm −3 , and when the carrier concentration is greater than 10 19 cm −3 , the mobility has no obvious improvement. As-annealing treatment eliminates defects and improves the electrical properties of carbon-doped InGaAsBi films and, meanwhile, drives more C onto group-III sites as donors, which increases the electron concentration and mobility.…”
Section: Electrical Propertiesmentioning
confidence: 98%
“…However, using SiH 4 , for the InGaAs doping, it is even difficult to reach the level of ∼10 18 cm −3 [16]. However, there are some studies in the literature, using Si 2 H 6 as the Si source, reporting of n-type doping of InGaAs bulk carrier concentration of 10 19 -10 20 cm −3 [10,17,18] but to our best knowledge there is no report of similar study achieving this high doping levels by using SiH 4 as a dopant source.…”
Section: Introductionmentioning
confidence: 99%
“…Although both techniques are rather well known and have been applied to various materials, characterization of doped layers in order to control free carrier concentrations with high accuracy remains a subject of discussion since it is crucial for high performance of certain devices [5]. Silicon has been used as a n-type dopant in many binary, ternary, and quaternary semiconductors, such as GaAs, InP, A1GaAs, A1GalnP, and GaInAs [6]. The spread of Si atoms and their electrical activity depend on the growth temperature and doping concentration [7].…”
Section: Introductionmentioning
confidence: 99%