Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications

Abstract

We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8×10 19 cm −3 carrier concentration and 1530 cm 2 V −1 s −1 mobility.

The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN

“…Characterization of epitaxially grown layers can be made by in-situ during growth and ex-situ after growth. In-situ characterization is very effective and also practical since it allows investigating the source of an unknown effect that occurs during the epitaxial growth [33].…”