Silicon hetero-interface photodetector

Hawkins, Aaron R.; Reynolds, T.E.; England, Derek R.; Babic, D.I.; Mondry, M.J.; Bowers, John E.

doi:10.1109/leos.1995.484492

Cited by 7 publications

(9 citation statements)

References 3 publications

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“…7, the 3 dB bandwidth is plotted for the SHIP detector as a function of the multiplication gain. The calculated results are in agreement with the measured results for the SHIP detector [5].…”

Section: Frequency Response Of Ship Detectorssupporting

confidence: 86%

“…VALANCHE photodetectors (APD's) are useful for op-A tical fiber communication systems operating near 1.3 or 1.55 pm [1]- [5] because APD receivers exhibit a higher sensitivity than PIN receivers due to the internal gain provided by APD's. Conventional InGaAs APD's have limited gainbandwidth product and poor noise figure because of the small difference between hole and electron ionization coefficients in 111-V semiconductors used to fabricate these detectors [6]- [7].…”

Section: Introductionmentioning

confidence: 99%

“…However, the quantum efficiency of Si APD's is negligible at 1.3-1.55 pm, making them unusable for fiber communication systems. To take advantage of the small excess noise of the multiplication process and high gain-bandwidth product and obtain high quantum efficiency, a structure based on fusing silicon to InGaAs has been proposed and demonstrated [5]. As shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

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Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Hawkins

Bowers

1996

J. Lightwave Technol.

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Absiruct-We present analytical expressions for the frequency response of avalanche photodetectors (APD's) with separate absorption and multiplication regions (SAM). The effect of the electric field profile in the multiplication layer on frequency response is considered for the first time. Previous theories have assumed that the multiplication layer is very thin and the peak electric field, which corresponds to the effective multiplication plane, is positioned away from the absorption layer. This is a poor assumption for many devices, and in particular for silicon hetero-interface photodetectors (SHIP'S). We present a theoretical model in which the thickness of the multiplication layer is arbitrary and the peak electric field may be positioned arbitrarily in relation to the absorption layer. We also consider the effects of parasitics, transit-time, and avalanche buildup time. Both front and back illumination from either multiplication layer or absorption layer are considered. The calculated results are compared with experimental results for existing SHIP's and performance predictions are also made for optimized SHIP structures. SHIP APD's with gain-bandwidth product in excess of 500 GHz are possible.

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Section: Frequency Response Of Ship Detectorssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Hawkins

Bowers

1996

J. Lightwave Technol.

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“…As silicon has a higher refractive index than 1.55-mm bandgap InGaAsP, the optical mode in Figure 10.8(a) is largely confined to the silicon. A scanning electron micrograph 16 (SEM) of the cross-section of the laser is shown in Figure 10.8(b). A scanning electron micrograph 16 (SEM) of the cross-section of the laser is shown in Figure 10.8(b).…”

Section: Novel Devices and Integration Methodsmentioning

confidence: 99%

“…16 Progression of wafers yields vs chip size for various time periods of the LS-PIC production. A low-defect density of 0.86 cm À2 combined with a high-cluster parameter of 4.7 indicate a high-production yield process capability.…”

mentioning

confidence: 99%