2021
DOI: 10.1364/ome.443872
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Silicon-integrated monocrystalline oxide–nitride heterostructures for deep-ultraviolet optoelectronics

Abstract: New opportunities for high-performance CMOS-compatible optoelectronic devices have accelerated the interest in vertically configured device topologies that enable next-generation photonic technologies. Lately, TiN has been identified as a promising refractory metal–ceramic for the hybrid integration of emerging semiconductor materials on a variety of substrates, including Si, MgO, and sapphire. Among these, Si is the least expensive and most commonly used element and substrate material in the semiconductor dev… Show more

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Cited by 6 publications
(3 citation statements)
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“…TiN’s high electrical conductivity and CMOS compatibility make it an attractive epitaxial buffer for back-contacted vertical power devices. It can be grown under conditions that avoid SiO x formation at the Si-interface.…”
Section: Introductionmentioning
confidence: 99%
“…TiN’s high electrical conductivity and CMOS compatibility make it an attractive epitaxial buffer for back-contacted vertical power devices. It can be grown under conditions that avoid SiO x formation at the Si-interface.…”
Section: Introductionmentioning
confidence: 99%
“…6 Moreover, they challenge the traditional trade-offs associated with co-locating high-performance photonics and advanced CMOS electronics on a single chip. 7 Our work paves the way for seamless integration of these technologies, 8,9 opening doors to unprecedented levels of miniaturization and performance in photonic circuits.…”
Section: Introductionmentioning
confidence: 99%
“…Such minuscule overlap between the accumulation layer and the plasmonic modal crosssection necessitates an extended device length to obtain reasonable extinction ratio (ER) levels, which inevitably leads back to substantial IL 32 . Moreover, plasmonic modulator designs proposed to date have largely focused on amplitude modulation 33,34 . As such, there is still a need for a compact, low-power modulator design that can avert the strict ER-IL trade-off, better exploit the tunable properties of thin-film optical materials such as ITO, and support different modulation types.…”
Section: Introductionmentioning
confidence: 99%