Silicon interposer: A versatile platform towards full-3D integration of wireless systems at millimeter-wave frequencies

Bouayadi, O. El; Dussopt, Laurent; Lamy, Yann; Dehos, Cédric; Ferrandon, C.; Siligaris, Alexandre; Soulier, Brigitte; Simon, G.; Vincent, Pierre

doi:10.1109/ectc.2015.7159713

Cited by 32 publications

(9 citation statements)

References 13 publications

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“…In addition, research has been reported [18][19][20][21] predicting the cycle life and modelling the electrical and mechanical. A wafer-level passive silicon interposer with annular TSVs is proved by El Bouayadi et al [22]. Forced convection factor decreases the via filling efficiency due to the convection-dependent adsorption (CDA) effect, as proposed by Zhang Y.Z.…”

Section: Silicon Interposer Productionmentioning

confidence: 96%

“…Cost Performance Reference 3D ASIC and memory integration 220/50 µm High A total of 3000 cycles with 10 min ramps and dwell from 0 to 100 • C [14] Passive Interposer 230/80 µm Low High density [15] RF wireless devices 120/60 µm N/A The loss of 0.6 dB/mm at 60 GHz. [22] Passive Interposer 130/50 µm N/A No electrical failure occurred in all samples after 500 MSTs (moisture sensitivity testing) and 1000 TCTs (thermal cycling testing from −40 • C to 125 • C). Only two of them failed after 3000 TCTs.…”

Section: Application Via Depth/diametermentioning

confidence: 97%

“…The loss of 0.6 dB/mm at 60 GHz. [22] The interposer production An annular copper through-silicon via (TSV) integration process.…”

Section: Research Content Conclusion Referencementioning

confidence: 99%

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TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Section: Silicon Interposer Productionmentioning

confidence: 96%

Section: Application Via Depth/diametermentioning

confidence: 97%

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TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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“…Traditionally, radio frequency (RF) SIP solution-based microwave printed circuit boards or high-performance ceramic substrates, such as HTCC (high temperature co-fired ceramics) and LTCC (low temperature co-fired ceramics), have faced challenges in terms of their precision of critical dimension and minimum size of redistribution lines and pitch. Due to the precise wiring capacity and the low mismach in material coefficient of thermal expansion (CTE), research works have been done to explore the feasibility as well as the technical advantage of TSV technology for RF application [ 2 , 3 , 4 , 5 , 6 ]. It has been found that the RF property of TSV becomes the key issue in this field as the natural property of Si as semiconductor, which is characterized in term of S-parameters.…”

Section: Introductionmentioning

confidence: 99%

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Wang

Jin

et al. 2021

Micromachines

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Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

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“…However, the selection for MMW SiP is a tradeoff among compactness, cost, electrical performance and thermo-mechanical reliability [26]. Taking the advantages of high precision and short interconnection, SiP technology based on silicon process is a promising candidate for the realization of a low-cost, fully integrated MMW transceiver system [27,28,29,30,31]. However, more effort is needed to achieve high density integration of T/R modules and antenna array with broadband interconnection for E-band applications.…”

Section: Introductionmentioning

confidence: 99%

Si-based system-in-package design with broadband interconnection for E-band applications

Chu

Zhou

et al. 2021

IEICE Electron. Express

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This letter presents a silicon-based package design for E-band communication systems. As the primary concern to package, the radiofrequency (RF) interconnection from carrier board to the die is carefully designed based on the impedance transformation characteristic of the transmission line (TL). In addition, the simulation results show that the designed interconnection is robust to moderate process deviations. To verify the electrical performance of the designed interconnection, a dummy testing structure is designed, fabricated and measured. The measurement results show that the return loss is less than −10.6 dB in the commercial communication frequency range of 71-86 GHz for E-band applications.

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Silicon interposer: A versatile platform towards full-3D integration of wireless systems at millimeter-wave frequencies

Cited by 32 publications

References 13 publications

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

A RF Redundant TSV Interconnection for High Resistance Si Interposer

Si-based system-in-package design with broadband interconnection for E-band applications

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