Silicon Interposer Package for MMIC Heterogeneous Integration Based on Gold/Solder Ball Flip-Chip Technique

Shi, Yongrong; Shao, Dengyun; Feng, Wenjie; Zhang, Junzhi; Zhou, Ming

doi:10.1109/tcpmt.2019.2917292

Cited by 14 publications

(2 citation statements)

References 15 publications

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“…With the rapidly increased demands of power electronics, novel materials, such as GaN and SiC, are nowadays becoming more and more popular due to their capabilities of high power, temperature, frequency, and radiation tolerance [2][3][4]. GaN devices are widely considered to be excellent candidates for microwave use [5][6][7][8][9][10][11][12][13][14]. Recently, GaN materials have also become promising candidates for power use due to their advantages of high voltage and rapid switching time [15].…”

Section: Introductionmentioning

confidence: 99%

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Wu,

Fu,

Luo

et al. 2023

Micromachines

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GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried out. The Cascode device consists of a low-voltage MOSFET and a high-voltage depletion-mode GaN MISHEMT. Cascode devices of both conventional processed MOSFET and radiation-hardened MOSFET devices are fabricated to observe the TID effects. Experiment results indicate that, for the Cascode device with conventional processed MOSFET, the VTH shifts to negative values at 100 krad(Si). For the Cascode device with radiation-hardened MOSFET, the VTH shifts by −0.5 V at 100 krad(Si), while shifts to negative values are 500 krad(Si). The annealing process, after the TID experiment, shows that it can release trapped charges and help VTH recover. On one hand, the VTH shift and recover trends are similar to those of a single MOSFET device, suggesting that the MOSFET is the vulnerable part in the Cascode which determines the anti-TID ability of the device. On the other hand, the VTH shift amount of the Cascode device is much larger than that of a previously reported p-GaN HEMT device, indicating that GaN material shows a better anti-TID ability than Si.

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Section: Introductionmentioning

confidence: 99%

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Wu,

Fu,

Luo

et al. 2023

Micromachines

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“…Compared with ceramic laminated SiP and organic substrate laminated SiP, silicon based SiP solution has gradually become a research hotspot in academia and industry due to its advantages in low-volume, miniaturization, high performance, and easiness for multifunctional heterogeneous integration [24,25,26,27,28]. However, the application of high-frequency RF system in stacked silicon based SiP has been much fewer than ceramic-based and organic-based in reseach results.…”

Section: Introductionmentioning

confidence: 99%

Design of a Ka-band receiver front end using Si-based system in package

Zhu

Jun

Wang

et al. 2021

IEICE Electron. Express

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This letter presents a Ka-band receiver front end in the form of system in package using silicon substrate. The front end adopts a dualchannel superheterodyne structure, two GaAs downconverter chips and a power divider chip are integrated on the silicon substrate with an embedded substrate integrated waveguide bandpass filter. Wire-bonding is used for connections and unique impedance matching structure is designed and embedded into the GSG transmission line to compensate for additional insertion loss. The test results show a conversion gain of -13.4 dB without the gain of low noise amplifier. The work in this letter is one of few presentation of a RF system in the form of stacked silicon system in package, revealing the feasibility of stacked silicon in complex RF system implement.

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Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

Sun²,

et al. 2022

Microelectronics Journal

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Silicon Interposer Package for MMIC Heterogeneous Integration Based on Gold/Solder Ball Flip-Chip Technique

Cited by 14 publications

References 15 publications

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

Design of a Ka-band receiver front end using Si-based system in package

Fabrication and high-frequency characterization of low-cost fan-in/out WLP technology with RDL for 2.5D/3D heterogeneous integration

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