Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)

Mao, Jinhai; Li, Huang; Pan, Yi; Gao, Min; He, Junfeng; Zhou, Haitao; Hua, Guo; Tian, Yongtao; Zou, Qiang; Zhang, Lizhi; Zhang, Haigang; Wang, Yeliang; Du, Shixuan; Zhou, Xiaowen; Neto, A. H. Castro; Gao, Hongjun

doi:10.1063/1.3687190

Cited by 102 publications

(104 citation statements)

References 22 publications

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“…[35][36][37][38] In our recent study, we reported the facile intercalation of water underneath the graphene on Ru(0001), 23 and showed that the water film decouples the first layer from the substrate. This is presented in Fig.…”

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confidence: 98%

Electronic screening in stacked graphene flakes revealed by scanning tunneling microscopy

Feng

Salmerón

2013

Applied Physics Letters

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Electronic doping and screening effects in stacked graphene flakes on Ru and Cu substrates have been observed using scanning tunneling microscopy (STM). The screening affects the apparent STM height of each flake in successive layers reflecting the density of states near the Fermi level and thus the doping level. It is revealed in this way that the strong doping of the first graphene layer on Ru(0001) is attenuated in the second one, and almost eliminated in the third and fourth layers. Similar effect is also observed in graphene flakes on Cu(111). In contrast, the strong doping effect is suppressed immediately by a water layer intercalated between the graphene and Ru.

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confidence: 98%

Electronic screening in stacked graphene flakes revealed by scanning tunneling microscopy

Feng

Salmerón

2013

Applied Physics Letters

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“…Very recently, silicon, a semiconductor element, was introduced as the interfacial layer between graphene and its metallic host in the system of Gr/Ru(0001), which effectively weakens the interaction between graphene and ruthenium. 19 In this regard, silicon buffer layers play a particularly important role, since this semiconductor material makes it possible to directly insert an insulating interface between graphene and underlying metal. Such a graphene/insulator/metal heterostructure could be compatible with current microelectronic technology and provide the advantages of device integration based on largescale graphene.…”

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confidence: 99%

Silicon intercalation at the interface of graphene and Ir(111)

Meng

Zhou

et al. 2012

Applied Physics Letters

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We report on the structural and electronic properties in the heterostructure of graphene/silicon/Ir(111). A (√19 × √19)R23.41° superstructure is confirmed by low energy electron diffraction and scanning tunneling microscopy and its formation is ascribed to silicon intercalation at the interface between the graphene and the Ir(111) substrate. The dI/dV measurements indicate that the interaction between graphene and Ir is effectively decoupled after silicon intercalation. Raman spectroscopy also reveals the vibrational states of graphene, G peak and 2D peak, which further demonstrates that the silicon-buffered graphene behaves more like intrinsic graphene.

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“…7,8 In the last few years, huge efforts have been undertaken to understand the electronic, structural, and magnetic properties of intercalated graphene systems both with and without the substrate. [9][10][11][12][13] Intercalation of Si is particularly interesting due to the fact that this material forms the basis of modern electronics technology. In addition, Si intercalated graphene systems are characterized by a particularly high stability.…”

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confidence: 99%