Silicon light emissions from boron implant-induced defect engineering

Dislocation related band-edge photoluminescence in boron-implanted silicon

“…It is evident here that the emission has increased by a factor of approximately 3 over that of the unprocessed sample for an annealing temperature of 900 °C. This result is in general agreement with the findings of Pan et al [11] for B-implanted EL devices fabricated under similar conditions. In the same work, Pan identified that 900 °C annealing temperatures marked the transition from {113} rodlike extended defects to dislocation loops.…”

“…The band-edge luminescence was shown to have a maximum integrated intensity of 3 times that of unprocessed material. This result is similar to that observed observed by Pan et al [11] who have investigated similar EL devices. They explained that this result is a consequence of the formation of {113} rod-like defects which form at these annealing temperatures.…”

“…The fact that both of these curves peak at a temperature around 850-900 °C suggests that an important structural change is occurring in this temperature range. Given that transitions from {113} rod-like defects to dislocation loops have been observed at similar temperatures [11], changes to the optical properties at the near surface region seem plausible. We are continuing to study this system to better understand this effect using techniques such as spectroscopic ellipsometry and absorption.…”

High–resolution X–ray Diffractometry of Proton Irradiated Silicon

“…Мощность дефектов этого типа растет, достигая значения 6 ⋅ 10 −3 мкм 3 . Известно [8], что в импланти-рованных кристаллах кремния в результате отжига формируются дислокационные петли междоузель-ного типа. Очевидно, что наблюдаемые изменения интенсивности диффузного рассеяния в области +q z связаны с процессами роста таких петель.…”

Relative stability of extended interstitial defects in silicon: First-principles calculations

“…The corresponding optimum width is ϳ10 nm, which agrees with the typical width of rodlike ͕311͖ defects appearing in TEM images. 1,4,5 Plan view, weak-beam, dark-field TEM images of different extrinsic extended defects in silicon: ͑a͒ ͕311͖ rodlike defects ͑Ref. 1͒ and ͑b͒ Frank loops ͑Ref.…”