Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates

Abstract

Silicon light-emitting diodes with dislocation-related electroluminescence have been studied at room temperature. For the fabrication of the light-emitting diode structures, a well-known method for the formation of dislocation-related luminescence centers during anneals of silicon with a high oxygen concentration in a flow of argon was modified by introducing a preliminary O+ ion implantation and carrying out a final anneal in a chlorine-containing atmosphere. In the electroluminescence spectra, the D1 dislocation-related luminescence line dominates at currents less than <150 mA and the near-band-edge luminescence line starts to dominate with increasing current. The electroluminescence excitation efficiency for the D1 center is 3.3·10-20 cm2·s at room temperature. Keywords:: Light-emitting diodes, dislocation-related luminescence, silicon, oxygen precipitates.

On the Barton Copper‐Catalyzed C3‐Arylation of Indoles using Triarylbismuth bis(trifluoroacetate) Reagents

“…where the CÀ Bi bond lengths average 2.250 Å. [49] The bismuthoxygen bond length also shows little In all structures shown below, the trifluoacetates point in the same direction such that the C=O bisects the largest CÀ BiÀ C angle. Intramolecular hypercoordination of the C=O to the bismuth is observed in 7 i, 7 o, and 26 b based on the C=O•••Bi bond lengths varying between 2.912 Å to 2.970 Å.…”