Silicon modulator based on omni junctions by effective 3D Monte-Carlo method

Zhu, Zijian; Zhao, Yingxuan; Huang, Haiyang; Yang, Li; She, Xiaojuan; Zhu, Junbo; Liao, Han-Tsung; Liu, Xiang; Huang, Rui; Liu, Hongbao; Sheng, Zhen; Gan, Fuwan

doi:10.1364/oe.475511

Cited by 6 publications

(2 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[6]. The effective 3D Monte-Carlo method is put forward in our previous work [7], fulfilled by implementing 2D Monte-Carlo results to save computation time and resources while maintaining the accuracy of doping profile. Both junctions were created using a typical two-doping-step manufacturing process flow.…”

Section: Resultsmentioning

confidence: 99%

U-L-shaped silicon modulator for efficient and high-speed transmission

Zhu,

Zhao,

Gan

2023

3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)

View full text Add to dashboard Cite

In order to achieve effective modulation, researchers have studied various doping profiles within silicon modulators, but optimization has so far mainly been carried out in the cross-section or solely in the propagation direction. Generating 3D doping profile can add more optimizing dimensions to the modulator design. This work proposes a modulator based on Ushaped and L-shaped junctions by the 3D effective Monte-Carlo method. The simulation results show that the modulation efficiency is 0.67 V• cm, and the loss is 25.7 dB/cm, with the bandwidth more than 36.3 GHz. This work demonstrates the benefits of 3D modulator design as the direction of light propagation is utilized to transport carriers, and provides a modulator solution for high-speed datacom.

show abstract

Section: Resultsmentioning

confidence: 99%

U-L-shaped silicon modulator for efficient and high-speed transmission

Zhu,

Zhao,

Gan

2023

3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023)

View full text Add to dashboard Cite

show abstract

“…However, this method is usually applied under 2D conditions, as adding another dimension consumes massive computational time and resources. Therefore, in our previous work [ 22 ], we proposed the effective 3D Monte-Carlo method to generate 3D doping profiles while ensuring accuracy. The effective 3D Monte-Carlo method is enabled by projecting the 2D Monte-Carlo doping profiles in three dimensions with respect to areas inside or outside the implantation boundaries.…”

Section: Methodsmentioning

confidence: 99%

X-Intersected Silicon Modulator of Well-Rounded Performance

et al. 2023

Self Cite

View full text Add to dashboard Cite

In silicon modulator design, implantation is always a key factor, significantly influencing the doping profile and carrier distribution. As waveguide doping is limited by the compact footprint of the modulator rib, three-dimensional complex optimization is a viable option to improve performance. This work proposes an X-intersected modulator based on two inversely slanted junctions using the effective 3D Monte Carlo method for junction generation. The optimized results show that the modulation efficiency of the design is 1.09 V·cm, while the loss is 18 dB/cm, and the 3 dB bandwidth reaches over 35 GHz owing to the decreased resistance and capacitance of the 3D junction. This work demonstrates the benefits of 3D doping design in silicon modulators, contributing to higher efficiency and avoiding additional PN overlap to introduce lower capacitance. The design of 3D doping profiles well balances the DC and AC performance, and provides novel modulator solutions for high-speed datacom.

show abstract