Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

Dimitrakis, P.; Kapetanakis, E.; Tsoukalas, D.; Skarlatos, D.; Bonafos, Caroline; Asssayag, G Ben; Claverie, A.; Perego, Michele; Fanciulli, M.; Soncini, V.; Sotgiu, R.; Agarwal, Aditya; Ameen, Mike S.; Sohl, C.; Normand, P.

doi:10.1016/j.sse.2004.03.016

Cited by 69 publications

(35 citation statements)

References 11 publications

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“…The formation of dispersed second phase nanoparticle ͑NP͒ systems in silica films via ion beam synthesis have been extensively studied in connection with technical applications exploring luminescent [1][2][3] or electrostatic [4][5][6] ͑Cou-lomb blockade͒ properties for the development of silicon based devices. The primary concept behind the ion beam synthesis method relies on the formation of a supersaturated solid solution produced by the implantation process, followed by the nucleation and growth of the new phase upon post-implantation thermal treatments.…”

Section: Introductionmentioning

confidence: 99%

Aging effects on the nucleation of Pb nanoparticles in silica

Luce

Kremer

Reboh

et al. 2011

Journal of Applied Physics

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The ion beam synthesis of Pb nanoparticles (NPs) in silica is studied in terms of a two step thermal annealing process consisting of a low temperature long time aging treatment followed by a high temperature short time one. The samples are investigated by Rutherford backscattering spectrometry and transmission electron microscopy. The results obtained show that highly stable Pb trapping structures are formed during the aging treatment. These structures only dissociate at high temperatures, inhibiting the nucleation of NPs in the metallic phase and causing an atomic redistribution that renders the exclusive formation of a two dimensional, uniform and dense array of Pb NPs at the silica–silicon interface. The results are discussed on the basis of classic thermodynamic concepts.

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Section: Introductionmentioning

confidence: 99%

Aging effects on the nucleation of Pb nanoparticles in silica

Luce

Kremer

Reboh

et al. 2011

Journal of Applied Physics

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“…Nonvolatile memory devices are expected to be operated at a lower voltage and with higher integration than conventional floating-gate memories [3]. Nonvolatile memory devices made of silicon nanocrystal (nc-Si) and germanium nanocrystal (nc-Ge) embedded in/on an oxide layer have been fabricated by several techniques such as chemical vapor deposition (CVD) [4,5], using a molecular ion beam [6,7] and, recently, using a focused ion beam (FIB) [8]. The FIB was used because they enable the formation of nanocrystal dots by a focused gallium (Ga + ) ions that can be precisely irradiated at array positions of nanoscale order.…”

Section: Introductionmentioning

confidence: 99%

Carbon Nanocrystal-Based Organic Thin-Film Transistors for Nonvolatile Memory Nanodevices

Mohamad

Tada

Miura

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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Organic semiconductor nonvolatile memory devices were successfully fabricated from organic thin-film transistors (OTFTs) embedded with nanocrystal carbon (nc-C) dots incorporating pentacene as an active layer. The nc-C dots were arranged in the channel region by a focused ion beam (FIB) technique using a precursor of low energy Ga + ions and a carbon source. The formation and morphology of nc-C dot arrays were investigated using a scanning ion microscopy (SIM) and atomic force microscopy (AFM), respectively. The SIM and AFM images show that the nc-C dot array was successfully grown on the SiO2 layer. The density of the two-dimensional nc-C dots was 5 × 10 9 cm −2 . The current-voltage (I − V ) characteristics at room temperature show that the fabricated OTFTs exhibit a memory effect upon the application of forward and reverse bias. Under the effect of gate bias, on and off states were induced and a threshold voltage shift (∆V th = 0.23 V) was obtained. The charge carrier mobility (µ) of the OTFTs is similar in both on and off states. The memory effect was attributed to the nc-C dots in the pentacene-dielectric interface.

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“…8 Such conditions restore significantly the integrity of the oxide and lead to gate stacks suitable for nonvolatile memory devices operating at low voltages. 9 Annealing in oxidizing conditions affects also the NC population. 10 As a consequence the oxidation step can be used for monitoring the size, density, and surface fraction of the NC population and thus for controlling the memory performance of the final devices.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

Coffin

Bonafos

Schamm

et al. 2006

Journal of Applied Physics

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Articles you may be interested inModeling stress retarded self-limiting oxidation of suspended silicon nanowires for the development of silicon nanowire-based nanodevices Journal of Applied Physics 110, 033524 (2011) The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals ͑NCs͒ fabricated by ultralow-energy ion implantation ͑1 keV͒ in thin silicon dioxide layers is reported. The NC characteristics ͑size, density, and coverage͒ have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature ͑900°C͒ below the SiO 2 viscoelastic point. An extended spherical Deal-Grove ͓J. Appl. Phys. 36, 3770 ͑1965͔͒ model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects, due to oxide deformation, slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density.

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Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

Cited by 69 publications

References 11 publications

Aging effects on the nucleation of Pb nanoparticles in silica

Aging effects on the nucleation of Pb nanoparticles in silica

Carbon Nanocrystal-Based Organic Thin-Film Transistors for Nonvolatile Memory Nanodevices

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

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