Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes

Moon, Dong‐Il; Choi, Sung-Jin; Kim, Chung-Jin; Kim, Jee-Yeon; Lee, Jin-Seong; Oh, Jin Kyung; Lee, Gi-Sung; Park, Yun-Chang; Hong, Dae-Won; Lee, Dong‐Wook; Kim, Young-Su; Kim, Jeoung-Woo; Han, Jin−Woo; Choi, Yang‐Kyu

doi:10.1109/led.2011.2106758

Cited by 39 publications

(13 citation statements)

References 10 publications

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“…The tetraethyl orthosilicate (TEOS) with thickness of 70 nm is employed for the device isolation as STI does in conventional CMOS process. More detailed process was explained in previously reported work [8]. A 2 nm-thick tunneling oxide is thermally grown on nanowire, and then a 2 nm-thick trapping layer of SiN and a 2 nm-thick blocking oxide were deposited using the LPCVD process.…”

Section: Device Fabrication and Measurementmentioning

confidence: 99%

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

Choi

Han

et al. 2014

Microelectronics Reliability

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Section: Device Fabrication and Measurementmentioning

confidence: 99%

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

Choi

Han

et al. 2014

Microelectronics Reliability

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“…The CF 4 -based polymer passivated the exposed Si surface, which protects the SiNW from being etched during the subsequent SF 6 plasma etching. The combined anisotropic and isotropic etching implemented in the Bosch process separated the SiNW from the bulk Si substrate [17] (step 3). A suspended SiNW with a width of 50 nm and a height of 100 nm was thus created, as shown in the inset of Fig.…”

Section: Fabrication Of a Dual-gate Fet Sensormentioning

confidence: 99%

A Dual-Gate Field-Effect Transistor for Label-Free Electrical Detection of Avian Influenza

et al. 2012

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A dual-gate silicon nanowire field-effect transistor (FET) fabricated on a bulk substrate is designed to perform label-free electrical detection of the avian influenza antibody. A region of a FET channel that is conventionally covered by a gate electrode is intentionally left open in the dual-gate configuration, to provide a binding site for biological species. As a result, the channel potential at this open area is affected by the polarity and charge of the biological species that binds to the opened channel. The proposed device can be used as a biosensor by comparing its electrical characteristics before and after exposing the device to biological species of interest. This detection mechanism is verified using numerical simulation and by attaching charged polyelectrolytes (PAH and PSS) to the opened channel. Additionally, the avian influenza antibody is successfully detected without a labeling step using the proposed dual-gate FET. As a biomedical diagnostic tool, the proposed biosensor offers the advantages of label-free detection capability, low-cost compatibility with the complementary metal-oxide semiconductor fabrication process, and a readout system for on-chip integration.

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“…A nitride hard mask was initially deposited as a stopping layer of CMP. The SiNW is fabricated by a one-route deep RIE process (Bosch process [6]). Independent gates are formed by n + poly-Si deposition and CMP.…”

Section: Dna Sensingmentioning

confidence: 99%

“…Silicon nitride was deposited as a stopping layer for the subsequent chemical-mechanical polishing (CMP). A SiNW was formed by means of the photo-resist ashing and deep RIE procedure known as the Bosch process [6]. As shown in Fig.…”

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confidence: 99%

CMOS-based biosensors with an independent double-gate FinFET

Ahn

Kim

Jung

et al. 2011

2011 International Electron Devices Meeting

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A novel biosensor based on an independent double-gate FinFET is demonstrated for the first time. It features a silicon nanowire implemented on a bulk substrate, a floating gate for charge sensing, and a control gate for current driving. The detection of charged polymers and DNA is demonstrated for the diagnosis of breast cancer.Introduction Silicon nanowire field effect transistors (SiNW FETs) have great potential in biosensor applications due to their highly sensitive label-free detection of biomolecules [1][2][3][4]. For the commercialization of SiNW FET biosensors, the SiNW should meet the requirements of CMOS compatibility, good uniformity, simple fabrication, and a low fabrication cost. As shown in the Table 1, the various SiNW fabrication techniques introduced thus far still have weaknesses. In this work, we used a simple one-route deep reactive-ion-etching (RIE) process to fabricate SiNW FET biosensors uniformly on a conventional bulk silicon substrate. The SiNW FET biosensors are realized using independent double-gate (IDG) FinFETs. Thus, the monolithic integration of CMOS circuitry and biosensors can be realized on the same plane (Fig. 1). The proposed biosensor facilitates the label-free detection of charged molecules such as polymers and DNA. Device FabricationThe process flow shown in Fig. 2 is similar to that of the well-known IDG FinFET process [5] except for the SiNW formation. A bulk silicon substrate was used as the starting material. Silicon nitride was deposited as a stopping layer for the subsequent chemical-mechanical polishing (CMP). A SiNW was formed by means of the photo-resist ashing and deep RIE procedure known as the Bosch process [6]. As shown in Fig. 3, the SEM and TEM images show that the SiNW is completely separated from the bulk substrate. To isolate each device, shallow trench isolation (STI) processes which consist of channel stop implantation, STI oxide deposition, a subsequent oxide blanket etch-back by CMP, and oxide recess by HF are employed. An 8-nm thick oxide was grown, and an n+ in situ doped poly-Si layer was subsequently deposited. Through the use of CMP, the initially connected single poly-Si gate was separated into double gates. After gate

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Silicon Nanowire All-Around Gate MOSFETs Built on a Bulk Substrate by All Plasma-Etching Routes

Cited by 39 publications

References 10 publications

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

A Dual-Gate Field-Effect Transistor for Label-Free Electrical Detection of Avian Influenza

CMOS-based biosensors with an independent double-gate FinFET

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