Silicon nanowire embedded circular photonic crystal fiber for nonlinear applications

Gunasundari, E.; Senthilnathan, K.; Sivabalan, S.; Nakkeeran, K.; Babu, P. Ramesh

doi:10.1109/icanmeet.2013.6609354

Cited by 1 publication

(1 citation statement)

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“…Due to silicon's high refractive index, silicon nanowires exhibit strong resonant field enhancement to incident light when the nanowire diameter is of the order of the wavelength of light that is used to excite the nanowires [1]. Arrays of silicon nanowires (high refractive index) embedded in a dielectric matrix (low refractive index) form a 2D photonic crystal with an electromagnetic band gap with applications that include non-linear photonic crystals [2], biological and chemical sensors [3], light emitter diodes [4] and electricallydriven microcavity lasers [5]. In addition to photonic applications, silicon nanowires are also an exciting material for electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates

2016

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We developed a fabrication process for embedding a dense array (10(8) cm(-2)) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polishing (CMP). Using this structure, we demonstrated a high current density (100 A cm(-2)), uniform, and long lifetime (>100 h) silicon field emitter array architecture in which the current emitted by each tip is regulated by the silicon nanowire current limiter connected in series with the tip. Using the current voltage characteristics and with the aid of numerical device models, we estimated the tip radius of our field emission arrays to be ≈4.8 nm, as consistent with the tip radius measured using a scanning electron microscope (SEM).

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