Silicon Nanowires for Photovoltaic Solar Energy Conversion

Peng, Kui‐Qing; Lee, Shuit‐Tong

doi:10.1002/adma.201002410

Cited by 579 publications

(381 citation statements)

References 228 publications

(352 reference statements)

Supporting

Mentioning

375

Contrasting

Unclassified

Order By: Relevance

“…The random distribution of Ag NCs ensures the fabrication of nanoporous p-GaN over the entire wafer surface. The nanoporous features of p-GaN after Agassisted etching are similar to those observed on silicon, 22,23 for which nanowires can be fabricated using metal nanoparticles as catalysts. Figure 3 shows the PL spectra of the conventional and nanoporous LED wafers.…”

confidence: 52%

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

et al. 2012

View full text Add to dashboard Cite

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K2S2O8 under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10 min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate

show abstract

confidence: 52%

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

et al. 2012

View full text Add to dashboard Cite

show abstract

“…For instance, solar cells based on a dense array of oriented, crystalline ZnO, TiO 2 , Si, CdS/CdTe nanowires have been reported by several research groups. 171,[175][176][177][178] A pioneering work was done by Law et al 175 in 2005. In this work, vertical arrays of ZnO nanowires were grown on F:SnO 2 conductive glass (FTO) substrates ( Fig.…”

Section: Solar Cells and Nanogeneratorsmentioning

confidence: 99%

“…Assembled semiconducting nanowire and nanofiber arrays have also been utilized to harvest solar energy [124][125][126]171,[175][176][177][178] and mechanical energy 53 in recent years. For instance, solar cells based on a dense array of oriented, crystalline ZnO, TiO 2 , Si, CdS/CdTe nanowires have been reported by several research groups.…”

Section: Solar Cells and Nanogeneratorsmentioning

confidence: 99%

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics

et al. 2012

View full text Add to dashboard Cite

Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/ optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor-liquid-solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir-Blodgett assembly, bubble-blown technique, electric/magnetic-field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

show abstract

“…For solar cells made from multicrystalline silicon wafers, where the random nature of the grain orientations precludes the formation of pyramids, acid texturing is instead used Whilst these methods are industry standards, new approaches have emerged to improve on optical absorption by utilizing nanoscale texturing. Examples include nano-textured surfaces formed via laser ablation [1,2], reactive ion etching [3,4], and wet chemical etching [5][6][7][8][9]. Several solar cells with nanowire AR structures have recently been reported with high power conversion efficiencies.…”

Section: Introductionmentioning

confidence: 99%

Passivation of all-angle black surfaces for silicon solar cells

Rahman

Bonilla

Nawabjan

et al. 2017

Solar Energy Materials and Solar Cells

View full text Add to dashboard Cite

Abstract-Optical losses at the front surface of a silicon solar cell have a significant impact on efficiency, and as such, efforts to reduce reflection are necessary. In this work, a method to fabricate and passivate nanowire-pyramid hybrid structures formed on a silicon surface via wet chemical processing is presented. These high surface area structures can be utilised on the front surface of back contact silicon solar cells to maximise light absorption therein. Hemispherical reflectivity under varying incident angles is measured to study the optical enhancement conferred by these structures. The significant reduction in reflectivity (<2%) under low incident angles is maintained at high angles by the hybrid textured surface compared to surfaces textured with nanowires or pyramids alone. Finite Difference Time Domain simulations of these dual micro-nanoscale surfaces under varying angles supports the experimental results. In order to translate the optical benefit of these high surface area structures into improvements in device efficiency, they must also be well passivated. To this end, atomic layer deposition of alumina is used to reduce surface recombination velocities of these ultra-black silicon surfaces to below 30 cm/s. A decomposition of the passivation components is performed using capacitance-voltage and Kelvin Probe measurements. Finally, device simulations show power conversion efficiencies exceeding 21% are possible when using these ultra-black Si surfaces for the front surface of back contact silicon solar cells.

show abstract

Silicon Nanowires for Photovoltaic Solar Energy Conversion

Cited by 579 publications

References 228 publications

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics

Passivation of all-angle black surfaces for silicon solar cells

Contact Info

Product

Resources

About