Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment

Ravi, M.; DasGupta, Amitava; DasGupta, Nandita

doi:10.1016/j.jcrysgro.2004.04.054

Cited by 25 publications

(12 citation statements)

References 15 publications

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“…Several passivation methods have been proposed such as chalcogenide treatment ͑modification of surface by sulfur atoms͒, 3 overgrowth with larger bandgap material, 4 and encapsulation of device sidewalls with silicon dioxide 5 or a polyimide layer. 7 The passivation with large bandgap material has also been reported but this significantly complicates the FPA fabrication process. However, temporal instability of such a passivation layer has been reported.…”

Section: Performance Improvement Of Inas/gasb Strained Layer Superlatmentioning

confidence: 99%

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

et al. 2010

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Section: Performance Improvement Of Inas/gasb Strained Layer Superlatmentioning

confidence: 99%

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

et al. 2010

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“…The PIN devices have mesa-and planar-type structures. For mesa PDs, the wet-etching process often causes surface defects and thus leads to a high surface leakage current and low reliability due to the exposed p-n junction in device, even the PDs with side-wall passivation [2], [3]. On the other hand, the planar PDs exhibit a low leakage current and long-term stability.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Huang

Lee

2014

IEEE Electron Device Lett.

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Conventional InP/InGaAs/InP heterostructure p-i-n photodiodes (PIN-PDs) are usually fabricated by postgrowth Zn diffusion to form the p-type region. In this letter, we propose a novel method to fabricate the high performance of largearea planar InP/InGaAs/InP PIN-PDs with Mg driven-in process. The Mg driven-in is implemented by spin-on dopant technique using magnesium-silica-film (MgSiO x ) source and through the rapid thermal diffusion. The preparation of MgSiO x source carrier as the p-type dopant for InP/InGaAs heterostructure is more time-saving than that of zinc-phosphorous-dopant-coating because the latter needs an additional step of oxygen (O 2 ) plasma to remove a thick resin layer. To improve the responsivity of vertically illuminated PDs, Si/Al 2 O 3 bilayers are deposited as the antireflective coating. The 800-µm-diameter PD with Mg driven-in exhibits a low dark current of 20 pA (or 4 nA/cm 2 ) at −10 mV, a high responsivity of 1.14 A/W at 1550-nm wavelength, an excellent quantum efficiency of 91%, and a good uniformity in the light received area. These characteristics are comparable to those of the PD with Zn driven-in. Index Terms-p-i-n photodiodes (PIN-PDs), rapid thermal diffusion (RTD), spin-on-dopant (SOD), magnesium-silicafilm (MgSiO x ).

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“…Large leakage currents limit detector sensitivity and, as such, much work has been done in regard to surface passivation of mesa-type devices fabricated in this material system. Several passivation methods for InGaAs/InP mesa p-i-n photodetectors have been reported in the literature, including the use of SiO 2 , 3,4 SiNx, 3,5,6 polyimide, 3,6-8 and benzocyclobutene (BCB) 9 with varying degrees of success. Another promising technique, sulfur passivation using chemical baths, was shown to be particularly effective in reducing surface states in III-V compounds in a variety of device types.…”

Section: Introductionmentioning

confidence: 99%

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

Teynor

Vaccaro

Buchwald

et al. 2005

Journal of Elec Materi

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A cadmium sulfide (CdS) passivation process was demonstrated for the first time on InGaAs/InP p-i-n mesa photodetectors. The passivated devices produced lower reverse bias leakage currents in comparison to devices that received only a thermally deposited SiO 2 film. The subsequent deposition of SiO 2 on the passivated devices produced virtually no change to the aforementioned leakage currents even after undergoing a 3-h, 300°C thermal treatment. In contrast, similar SiO 2 capped devices, fabricated without the CdS passivating layer, show a large increase in leakage current when subjected to the same thermal cycle. Leakage current versus mesa diameter measurements suggest these results are due to reduced surface recombination at the exposed mesa sidewall. X-ray photoelectron spectroscopy (XPS) results indicate the S:Cd ratio of these films to be 0.77.

show abstract

Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment

Cited by 25 publications

References 15 publications

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

Large-Area Planar InGaAs p-i-n Photodiodes With Mg Driven-in by Rapid Thermal Diffusion

Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes

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