Silicon nitride as a mask in phosphorus diffusion

Fränz, I.; Langheinrich, W.

doi:10.1016/0038-1101(69)90016-1

Cited by 9 publications

(1 citation statement)

References 12 publications

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“…Many of these designs require single-side processing of c-Si wafers, for which sacrificial masking layers, such as silicon oxide and/or silicon nitride, are typically used. [15][16][17][18] These sacrificial masking layers are typically removed in HF solutions, as the extreme etch selectivity of HF is expected to have minimal effects on the un-masked surface regions of the c-Si wafer. However Ebong et al observed an etch back phenomenon of n + c-Si and a reduction of the surface carrier density resulting from an extended surface clean of the n + c-Si in HF.…”

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confidence: 99%

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Liu

Lin

Heinrich

et al. 2013

ECS J. Solid State Sci. Technol.

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The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric acid (HF) is routinely exploited in the fabrication of various silicon based devices such as microelectromechanical systems (MEMS) and silicon solar cells. In this paper it is shown that the high selectivity does not apply to highly doped n-type c-Si. We confirm experimentally that the etch rate of highly doped n-type c-Si is about 0.8 nm/minute in diluted HF, which is more than 10 times higher than previous results reported in the literature and measured at lower carrier concentrations. We propose that a combination of factors is contributing to the observed fast etching rate of heavily doped n-type c-Si. The proper understanding and exploitation of the etching mechanism of n+ c-Si by HF can be very beneficial for the fabrication of silicon MEMS and solar cell devices.

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mentioning

confidence: 99%

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Liu

Lin

Heinrich

et al. 2013

ECS J. Solid State Sci. Technol.

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Germanium and Silicon

Connolly

1972

Semiconductors

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Deposition of silicon films in presence of nitrogen plasma—A feasibility study

et al. 2002

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A design, development and validation work of plasma based 'activated reactive evaporation (ARE) system' is implemented for the deposition of the silicon films in presence of nitrogen plasma on substrate maintained at room temperature. This plasma based deposition system involves evaporation of pure silicon by e-beam gun in presence of nitrogen plasma, excited by inductively coupled RF source (13⋅ ⋅56 MHz). The activated silicon reacts with the ionized nitrogen and the films get deposited on silicon substrate. Different physical and process related parameters are changed. The grown films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and ellipsometry. The results indicate that the film contains silicon nitride and a phase of silicon oxy nitride deposited even at room temperature. This shows the feasibility of using the ARE technique for the deposition of silicon films in nitrogen plasma.

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Silicon nitride as a mask in phosphorus diffusion

Cited by 9 publications

References 12 publications

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Unexpectedly High Etching Rate of Highly Doped n-Type Crystalline Silicon in Hydrofluoric Acid

Germanium and Silicon

Deposition of silicon films in presence of nitrogen plasma—A feasibility study

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