Silicon nitride cover layer prepared by silane-free plasma chemical vapor deposition for high quality surface passivation of silicon solar cells

Wu, Hsin-Yu; Hsu, Chia-Hsun; Liu, Ting-Xuan; Ou, Yu-Chih; Hsu, Yu-Hsuan; Wu, Wan-Yu; Lien, Shui−Yang; Jiang, Yeu–Long

doi:10.1016/j.surfcoat.2018.04.092

Cited by 10 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Possessing an increased density and uniformity of the distribution of particles over the cross-section of the reactor, such a plasma provides greater uniformity of the films over the entire area of the substrate [30]. At low pressure and low deposition temperature, ICP CVD produces high-quality films such as SiN x :H [31,32], SiO x N y [33], SiO 2 /SiN x film stacks [34], and SiC x N y :H [35]. Previously, we used this technique for the synthesis of SiC x N y O z :H and SiC x N y :H films by decomposition of hexamethyldisilazane and hexamethylcyclotrisilazane as precursors [36][37][38].…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

et al. 2022

View full text Add to dashboard Cite

Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiCxNy:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiCxNy:H films deposited using TMDSN + N2 mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air.

show abstract

Section: Introductionmentioning

confidence: 99%

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

et al. 2022

View full text Add to dashboard Cite

show abstract

“…CH:Si films obtained using a mixture of TMS and acetylene showed corrosion resistance to nitric acid [27]. The silicon nitride coating obtained using a mixture of TMS and ammonia had passivating properties and also contributed to the stabilization of the aluminum oxide sublayer during operation at elevated temperatures [28]. Silicon carbonitride layers using from a mixture of TMS and ammonia under the conditions of MW PECVD synthesis possessed such mechanical properties as hardness of up to 12 GPa and a Young's modulus of up to 120 GPa [29].…”

Section: Introductionmentioning

confidence: 99%

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

et al. 2023

View full text Add to dashboard Cite

PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

show abstract

Effect of Cu-doped ZnO Thin Films on the Electron–Hole Pair Lifetime in Silicon Wafers

Salem

Ghannam

Salem

et al. 2023

Silicon

View full text Add to dashboard Cite

Silicon nitride cover layer prepared by silane-free plasma chemical vapor deposition for high quality surface passivation of silicon solar cells

Cited by 10 publications

References 30 publications

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

Effect of Cu-doped ZnO Thin Films on the Electron–Hole Pair Lifetime in Silicon Wafers

Contact Info

Product

Resources

About