Silicon Nitride Photonics for the Near-Infrared

Abstract

In recent years, silicon nitride has drawn attention for the realisation of integrated photonic devices due to its fabrication flexibility and advantageous intrinsic properties that can be tailored to fulfill the requirements of different linear and non-linear photonic applications. This paper focuses on our progress in the demonstration of enhanced functionalities in the near infrared wavelength regime with our low temperature (<350 • C) SiN platform. It discusses (de)multiplexing devices, nonlinear all optical conversion, photonic crystal structures, the integration with novel phase change materials, and introduces applications in the 2 µm wavelength range.

Laser trimming of the operating wavelength of silicon nitride racetrack resonators

“…In general, devices with silicon dioxide cladding appear to have lower losses and higher Q factor (and extinction ratio). We believe that the surface roughness of the waveguide with air cladding represents a significant contribution to the measured loss [16]. The insertion loss tends to increase of approximately 0.07 dB after each exposure for the device with oxide cladding, as observable from Figure 4b.…”

“…It can be either deposited by Low Pressure Chemical Vapor Deposition (LPCVD) at high temperatures (>700°C) or by Plasma Enhanced Chemical Vapour Deposition (PECVD) at low temperatures (<400°C). The former method allows precise control over homogeneity and thickness, while the latter allows for the deposition of silicon-rich or nitrogen-rich layers by adjusting the silicon-nitrogen ratio [14][15][16]. For all these reasons, silicon nitride has been successfully used for realising low-loss waveguides (≈0.1 dB/m, orders of magnitude lower than SOI waveguides), wavelength multiplexers, interferometers, and optical filters [15,[17][18][19].…”

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

“…A siliconrich (higher refractive index) or nitride-rich (lower refractive index) waveguide can be achieved by changing the N/Si ratio. [4] The high TO coefficient of silicon makes silicon waveguide devices strongly sensitive to temperature variations, especially Yikai Su received his Ph.D. degree in electrical engineering from Northwestern University, Evanston, IL, USA in 2001. He worked at Crawford Hill Laboratory of Bell Laboratories and then joined the Shanghai Jiao Tong University as a full professor in 2004.…”

C0.3N0.7Ti-SiC Toughed Silicon Nitride Hybrids with Non-Oxide Additives Ti3SiC2

“…Although several alternatives of structural ceramics have been proposed, silicon nitride (Si 3 N 4 )-based ceramics remain competitive due to their superior properties, involving high strength and hardness at elevated temperatures, high resistance to oxidation and chemical attack, low coefficient of tribological friction and thermal expansion, and low dielectric permittivity, etc. [1][2][3][4][5][6][7][8][9][10]. As important multifunctional materials, Si 3 N 4 ceramics have found wide range of successful application towards gas turbine engine components [10][11][12][13][14], cutting tools [11,15], radomes [2], and even integrated circuit [16,17], optical devices [18,19], etc.…”