Silicon on insulator Mach–Zehnder waveguide interferometers operating at 1.3 μm

Zhao, Ce Zhou; Li, G. Z.; Liu, E. K.; Gao, Yong; Liu, X. D.

doi:10.1063/1.114603

Cited by 73 publications

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“…A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 89%

“…MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 99%

“…These devices have a limited extinction ratio of about 13 dB for the best reported [1, 2, 4], and are bandwidth-limited to about 100 kHz [1, 2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

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confidence: 99%

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Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

2001

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We present comparative measurements of two Mach-Zehnder interferometers, one with Y-junction couplers and the other with MMI couplers, both developed in siliconon-insulator technology and using plasma dispersion effect for light phase modulation. Measurements of fiber-to-fiber losses, absorption coefficient, output intensity vs. time and extinction ratio vs. frequency have been performed at λ = 1.3 µm and at λ = 1.55 µm. Results are reported and discussed in this paper.PACS 42.25.Hz; 42.82 Bq; 42.82 Et; 42.82 Gw; 42.79Hp IntroductionMach-Zehnder interferometers (MZI) in siliconon-insulator (SOI) technology have been and still are the subject of much interest due to the high potential of silicon optoelectronic devices. Silicon is highly transparent in the infrared spectral region and its electronic capabilities are well known, making SOI a very attractive technology combining optical and electronic functions with optimal features on the same substrate.MZIs using standard Y-junction couplers based on the thermo-optic effect have already been proposed in the past. These devices have a limited extinction ratio of about 13 dB for the best reported [1, 2, 4], and are bandwidth-limited to about 100 kHz [1, 2], except for a special device operating up to 700 kHz [5]. Multimode interference (MMI) couplers in SOI technology have been proposed for the first time in thermo-optic 1 × 2 and 2 × 2 switches [3].MZIs using standard Y-junction couplers based on the plasma dispersion effect have also been proposed in the past [6,7]. A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].We present two MZIs, one with Y-junction-couplers and one with MMI couplers, both based on the plasma dispersion effect. A Y-junction-couplers MZI based on the thermo-optic effect has also been realized on the same substrate for performance comparison. The fiber-to-fiber insertion losses, ab-✉ Fax: +41-21/693 26 14, E-mail: paolo.dainesi@epfl.ch sorption coefficients, optical coefficients modulated intensities as functions of time, and modulation extinction ratios versus signal frequencies for these devices were measured at the wavelengths 1.3 µm and 1.55 µm. At 1.3 µm, polarizationsensitive extinction ratio measurements were also performed. Comparative results are reported and discussed in this paper.The Y-junction MZI shows the best extinction ratio reported to date, and the MMI MZI is the first device presented in this configuration. Devices descriptionThe devices were realized by etching rib waveguides in a separation by implanted oxygen (SIMOX) SOI wafer, the cross-section being shown in Fig. 1a. SOI wafers were originally developed to solve some of the problems shown in bulk silicon electronics related to the stray capacitance between the doped regions and the substrate. The SIMOX process consists basically of two steps [12]: first, a heavy dose of oxygen is implanted on a standard silicon substrate. Actually the reference parameters are: oxygen dose of 1.8...

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“…A response time of 50 ns and a modulation depth of − 4.9 dB are reported in [6], while a modulation depth of 98% measured in [7].…”

Section: Introductionmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

2001

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“…Figure 2 eloquently shows the importance and advantages of the versatile silicon-on-insulator (SOI) waveguide platform [11], which has been progressing rapidly since 1991 [21,22]. The SOI platform has effectively become the benchmark platform for silicon photonics and several devices and photonic integrated circuits have been implemented on it since the mid-1990s [23][24][25][26][27]. The standard SOI waveguide technology is schematically represented later in the left structure of Figure 4.…”

Section: Can Silicon Homogenize Integrated Photonics?mentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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“…Broadly speaking, two categories of on-chip spectrometers exist: Firstly, there are dispersive spectrometers, such as arrayed-waveguide grating (AWG) spectrometers, 1,2 superprism spectrometers, 3,4 grating-based spectrometers, 5,6 and on-chip implementations of the Mach-Zehnder geometry. 7 However, these devices tend to be rather large, with a resolution in wavenumbers (cm −1 ) typically given by 1/L, where L is the characteristic size of the dispersive region in cm. Spectrometers can also be constructed by cascading optical elements with narrow-band spectral responses, such as Fabry-Pérot filters, 8 grating couplers, 9 microdonut resonators, 10 photonic crystal cavities [11][12][13] etc.…”

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confidence: 99%

On-chip spectroscopy with thermally tuned high-Q photonic crystal cavities

Liapis

Gao

Siddiqui

et al. 2016

Applied Physics Letters

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Spectroscopic methods are a sensitive way to determine the chemical composition of potentially hazardous materials. Here, we demonstrate that thermally-tuned high-Q photonic crystal cavities can be used as a compact high-resolution on-chip spectrometer. We have used such a chip-scale spectrometer to measure the absorption spectra of both acetylene and hydrogen cyanide in the 1550 nm spectral band, and show that we can discriminate between the two chemical species even though the two materials have spectral features in the same spectral region. Our results pave the way for the development of chip-size chemical sensors that can detect toxic substances.

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Silicon on insulator Mach–Zehnder waveguide interferometers operating at 1.3 μm

Cited by 73 publications

References 0 publications

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

Intensity modulation in two Mach–Zehnder interferometers using plasma dispersion in silicon-on-insulator

Emerging heterogeneous integrated photonic platforms on silicon

On-chip spectroscopy with thermally tuned high-Q photonic crystal cavities

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