Silicon-on-sapphire MOSFET transmit / receiveswitch for L and S band transceiver applications

Johnson, Rob; Houssaye, P.R. de la; Wood, Michael; Garcia, G.A.; Chang, Ching‐Wen; Asbeck, P.M.; Lagnado, I.

doi:10.1049/el:19970898

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…It is also used in aerospace and military applications because of its radiation resistance properties [4,5]. Apart from its technological importance, Si NSs are also studied because of change in electronic, vibrational and optical properties as a result of quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

“…Si-on-sapphire (SOS) is used in large-scale integrated circuitry primarily because it provides better electrical insulation to prevent stray currents in the electronic circuits. It is also used in aerospace and military applications because of its radiation resistance properties [4,5]. Apart from its technological importance, Si NSs are also studied because of change in electronic, vibrational and optical properties as a result of quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Kumar

Mavi

Shukla

2010

Silicon

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Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B + ) and phosphorous (P + ) ions. Different samples, prepared by varying the ion dose in the range 10 14 -5×10 15 and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B + implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B + dose greater than 10 14 ions cm −2 . The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at ∼1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P + implanted samples were also carried out as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P + ions of dose 5×10 15 ions cm −2 . The nanostructures are formed when the P + energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Kumar

Mavi

Shukla

2010

Silicon

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“…[4][5][6][7][8][9][10][11] The room temperature mobilities of electrons and holes in a strained Si or SiGe quantum well, respectively, are 5-10 times their values in Si CMOS devices. [13][14][15][16] Work is now underway to investigate the advantages of combining SiGe and SOS technologies. 6,[8][9][10][11] Another development has been the use of silicon-on-insulator (SOI) substrates for improved circuit performance.…”

Section: Introductionmentioning

confidence: 99%

SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

Mooney

Chu

Ott

2000

Journal of Elec Materi

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“…It has been addressed through a variety of process techniques including guard rings [16], a variety of siliconon-insulator (SOI) techniques [17], and silicon-on-sapphire (SOS) [18]. Furthermore, careful attention to appropriate circuit design, including the use of fully balanced signal paths, can alleviate the problem significantly.…”

Section: Technology Considerationsmentioning

confidence: 99%

Integrated circuit technology options for RFIC's-present status and future directions

Larson

Proceedings of CICC 97 - Custom Integrated Circuits Conference

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Abstract-This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJT's), Si/SiGe HBT's and GaAs MESFET's, PHEMTS and HBT's will be examined in light of these requirements.

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Silicon-on-sapphire MOSFET transmit / receiveswitch for L and S band transceiver applications

Cited by 9 publications

References 2 publications

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films

SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition

Integrated circuit technology options for RFIC's-present status and future directions

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