Silicon-on-sapphire waveguides design for mid-IR evanescent field absorption gas sensors

Huang, Yuewang; Kalyoncu, Salih K.; Song, Qi; Boyraz, Özdal

doi:10.1364/cleo_at.2012.jw2a.122

Cited by 18 publications

(28 citation statements)

References 4 publications

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“…In this wavelength region, the strong and specific absorption lines of many molecules [3], i.e. their "molecular fingerprints," allow for sensitive and selective spectroscopic analysis of the analyte of interest [4,5].…”

Section: Introductionmentioning

confidence: 99%

A silicon-based widely tunable short-wave infrared optical parametric oscillator

Kuyken¹,

Liu²,

Osgood³

et al. 2013

Opt. Express

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Abstract:We demonstrate a synchronously pumped optical parametric oscillator (OPO) based on parametric gain in a silicon-on-insulator photonic wire. We exploit the highly nonlinear broadband response of the photonic wire to achieve broadband single-pass amplification up to 54 dB. This allows us to construct an OPO that is tunable across a 75 nm-wide band near 2075 nm, when pumped by a picosecond pulse train at 2175 nm. Additionally we demonstrate broadband tuning across 150 nm by varying the pump wavelength and exploiting the higher order dispersion characteristics of the silicon photonic wire. Vlasov, "Engineering nonlinearities in nanoscale optical systems: physics and applications in dispersionengineered silicon nanophotonic wires," Adv. Opt. Photon. 1(1), 162-235 (2009)

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Section: Introductionmentioning

confidence: 99%

A silicon-based widely tunable short-wave infrared optical parametric oscillator

Kuyken¹,

Liu²,

Osgood³

et al. 2013

Opt. Express

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“…Passive photonic components need to be made from optically transparent materials in the mid-IR. Since silica becomes opaque at wavelengths longer than 4 μm, mid-IR integrated resonators demonstrated to date either involve special suspended designs [1][2][3][4][5][6][7][8][9] or new material platforms, such as silicon-on-sapphire [10][11][12][13][14][15][16], silicon-on-nitride [17][18][19][20], or germanium-on-silicon [21][22][23][24][25][26]. Active optoelectronic devices rely on narrow-bandgap semiconductors to enable operation at mid-IR wavelength, although lattice mismatch of these semiconductors generally prohibit their epitaxial growth and integration on silicon, and therefore heterogeneous integration of III-V semiconductors or graphene have been demonstrated as an alternative route to resolve the challenge [27][28][29][30].…”

Section: Integrated Photonics For Infrared Spectroscopic Sensingmentioning

confidence: 99%

Integrated photonics for infrared spectroscopic sensing

et al. 2017

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Infrared (IR) spectroscopy is widely recognized as a gold standard technique for chemical analysis. Traditional IR spectroscopy relies on fragile bench-top instruments located in dedicated laboratory settings, and is thus not suitable for emerging field-deployed applications such as in-line industrial process control, environmental monitoring, and point-ofcare diagnosis. Recent strides in photonic integration technologies provide a promising route towards enabling miniaturized, rugged platforms for IR spectroscopic analysis. Chalcogenide glasses, the amorphous compounds containing S, Se or Te, have stand out as a promising material for infrared photonic integration given their broadband infrared transparency and compatibility with silicon photonic integration. In this paper, we discuss our recent work exploring integrated chalcogenide glass based photonic devices for IR spectroscopic chemical analysis, including on-chip cavityenhanced chemical sensing and monolithic integration of mid-IR waveguides with photodetectors.

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“…The EFR η is a measure for the fraction of the EM field that can be used for absorption sensing. It was evaluated from the simulation results as the ratio of the field power in the air/gas area to the total modal power [5]. The evaluated η for the two modes is also shown in Figure 2.…”

Section: Modeling and Designmentioning

confidence: 99%

Photonic Gas Sensor Using a Silicon Strip Waveguide

Ranacher

Tortschanoff

Consani

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:Sensing of gases is a promising area for applications of photonic systems operating in the mid-infrared spectral range. We present an infrared evanescent-field absorption gas sensor based on a silicon strip waveguide, which was specifically designed for CO2 sensing. We discuss finite element simulations that were used to design the strip waveguide and furthermore present experimental data of quantitative CO2 measurements with the devised structures. The first demonstrator device detects concentrations down to 5000 ppm CO2 which is the workplace exposure limit in most jurisdictions.

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Silicon-on-sapphire waveguides design for mid-IR evanescent field absorption gas sensors

Cited by 18 publications

References 4 publications

A silicon-based widely tunable short-wave infrared optical parametric oscillator

A silicon-based widely tunable short-wave infrared optical parametric oscillator

Integrated photonics for infrared spectroscopic sensing

Photonic Gas Sensor Using a Silicon Strip Waveguide

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