Silicon Oxide As An Etching Mask for Silicon Nitride

Tombs, N. C.; Sewell, F. A.

doi:10.1149/1.2410981

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1971

1991

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Cited by 9 publications

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“…Silicon nitride is a technologically important material in the production of high performance integrated circuits because of its strong oxidation resistance, barrier against diffusion of impurities, and chemical stability (1)(2)(3)(4). Nitride films deposited by chemical vapor are used as gate insulators for nonvolatile memory cells in the form of dual dielectrics (5)(6)(7)(8).…”

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confidence: 99%

Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

Ito

Nozaki

Ishikawa

1980

J. Electrochem. Soc.

121

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It has been found that SiO2 can be converted directly to silicon nitride or oxynitride at the surface of SiO2 films by heating oxidized silicon wafers in anhydrous ammonia gas. At temperatures above 9O0~ nitrided SiO2 films have graded composites with respect to their nitrogen fraction. This analysis was performed by AES, infrared transmittance spectroscopy, and etch-rate profiles. Nitrided surface regions on SiO2 films, in which the nitride fraction ranged from 10% to 50%, showed remarkable masking effects against subsequent oxidation at high temperatures. * Electrochemical Society Active Member.

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