Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

Komano, Haruki; Ogawa, Yoji; Takigawa, Tadahiro

doi:10.1143/jjap.28.2372

Cited by 23 publications

(5 citation statements)

References 10 publications

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“…Insulator deposition by FIB was reported for different silane precursors. 382,394 For instance, with pentamethyl cyclopentasiloxane the best resistivity of FIB =8ϫ 10 11 ⍀ cm and break down fields of 650 V / m were achieved. 382 A comparison between FIB and FEB deposited insulators using TMOS showed FIB =1ϫ 10 3 ⍀ cm and FEB =1ϫ 10 6 ⍀ cm.…”

Section: Insulators and Resistorsmentioning

confidence: 99%

Gas-assisted focused electron beam and ion beam processing and fabrication

Utke¹,

Hoffmann²,

Melngailis³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

958

1,316

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Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering ͑milling͒, by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.

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Section: Insulators and Resistorsmentioning

confidence: 99%

Gas-assisted focused electron beam and ion beam processing and fabrication

Utke¹,

Hoffmann²,

Melngailis³

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

958

1,316

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“…Other metals such as Au (Blauner et al, 1989; Ro et al, 1987), Pd (Gross et al, 1986), Al (Gamo et al, 1984), Cu (Della Ratta et al, 1993), Fe (Furuya, 2008), Ta (Gamo et al, 1986), as well as insulators, e.g. SiO 2 (Komano et al, 1989), and tetraethoxysilane (TEOS) (Young & Puretz, 1995) are also used. For electrical measurements in vacuum and at RT, all metals can be used for contacting.…”

Section: Introductionmentioning

confidence: 99%

Ion‐beam deposited platinum as electrical contacting material in operando electron microscopy experiments at elevated temperatures

Simonsen¹,

Ma²,

Mariegaard³

et al. 2023

Microscopy Res & Technique

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Establishing a stable and well conducting contacting material is critical for operando electron microscopy experiments of electrical and electrochemical devices at elevated temperatures. In this contribution, the nanostructure and electrical conductivity of ion beam deposited Pt are investigated both in vacuum and in oxygen as a function of temperature. Its microstructure is relatively stable up to a temperature of approx. 800°C and up to an applied current density of approx. 100 kA/cm2. Its conductivity increases with temperature, attributed to densification, with changes in the hydrocarbon matrix being less important. Recommendations are provided with respect to the Pt deposition parameters in terms of maximizing stability and minimizing electrical resistance. Research Highlights It is feasible to use ion beam deposited Pt as electrical contacting material in operando electron microscopy. The deposited Pt is relatively stable up to 800°C and approx. 100 kA/cm2. The resistivity can be reduced by increasing the applied ion current during deposition and by thermal annealing at a temperature of 500°C in a few mbar of oxygen.

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“…SiOx [31], and Cu [19]. For applications in circuit repair, the resistivity is one of the most important characteristics to be evaluated.…”

Section: S Zl 2 2/3 Mi+m 2 )mentioning

confidence: 99%

Laser assisted focused-ion-beam-induced deposition of copper

Funatsu

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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As the minimum feature size becomes on the order of submicron dimensions, techniques to directly repair VLSI circuits and x-ray masks, techniques for so-called "microsurgery", are increasingly important. Focused ion beam (FIB) techniques have been commercially used to deposit conductors and insulators and remove materials in a localized area on substrates. Copper, which is a candidate future conductor material in VLSI circuits due to its low resistivity and high electromigration resistance, has been deposited from the organometallic complex, Cu(hfac)TMVS, using 25 keV gallium ions from liquid ion source. Earlier work has shown that substrate heating can lead to FIB-induced deposition of high conductivity Cu lines. In this work, use of a laser for localized heating for FIB-induced deposition has been investigated as an alternative to heating of the entire substrate. For laser-assisted FIB-induced deposition, a "high power" :semiconductor laser, of wavelength 977 nm and output power ranging continuously from 0 to 1.2 W, was used. The laser was focused onto a thermally oxidized Si substrate, and its spot area is estimated to be 5.90x10 -5 cm 2 , which gives the maximum intensity of 2.0x10 4 W/cm 2 . Cu(hfac)TMVS has no absorption in the gas phase at 977 nm. As a result, for films deposited using this laser, the dependencies of the growth rate and resistivity on the estimated substrate temperature are in good agreement with those of films deposited using conventional resistance heating. The growth rate ranges from 2.0 to 4.3 A/s, depending on the laser power. A small decline in the growth rate in the relatively low laser power regime was observed. At higher laser powers, the growth rate is significantly increased. The lowest resistivity lines, 3 gQ-cm (close to the resistivity of bulk copper, 1.7 gQ-cm), has been achieved when deposited at 1.1 W of laser power. At this laser power, the substrate temperature is estimated to be 120 °C. The smallest line width, 0.8 gm, has been achieved when deposited without using the laser. The deposited lines become slightly wider for higher laser powers, causing the aspect ratio to be smaller. When deposited at high temperature, the deposited film becomes coarse and granular. Laser-assisted, FIB-induced deposition has been demonstrated as a means of 'writing high conductivity submicron Cu lines.

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Silicon Oxide Film Formation by Focused Ion Beam (FIB)-Assisted Deposition

Cited by 23 publications

References 10 publications

Gas-assisted focused electron beam and ion beam processing and fabrication

Gas-assisted focused electron beam and ion beam processing and fabrication

Ion‐beam deposited platinum as electrical contacting material in operando electron microscopy experiments at elevated temperatures

Laser assisted focused-ion-beam-induced deposition of copper

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