The silicon oxide deposition technique with a Si focused ion beam was applied to rewiring from the first aluminum line below a wide power line in a 256k CMOS SRAM. The widths of the power line and the first aluminum line were 130 and 1.5 μm, respectively. First, the layer on the first aluminum line was etched for an area of 4.5×4.5 μm by a Ga focused ion beam. Second, silicon oxide was deposited into the hole using a 60-keV Si2+ focused ion beam with a mixed gas of tetramethoxysilane and oxygen, then, the deposited silicon oxide film was etched for an area of 2×2 μm down to the first aluminum line by the Ga focused ion beam. Last, tungsten was deposited for rewiring from the first aluminum line using the conventional focused ion beam method. The leak current measured between the deposited tungsten and the power line was 1×10−8 A at 5 V which is sufficiently small for operation analyses of semiconductor devices.

We have deposited a silicon oxide (SiOx) film with a high optical transmittance in the DUV region by a focused ion beam induced deposition technique using a gallium ion beam and a mixture of oxygen and TMCTS(1,3,5,7-tetramethylcyclotetrasiloxane) as a source gas. The optical transmittance of a 0.3 μm thick film is higher than 90% at the wavelength of 250 nm. The transmittance of the deposited SiOx film depends on both the source gas and ion beam irradiation conditions. A scaling to explain the transmittance along with the ion beam conditions is proposed.

A silicon oxide film has been formed by means of 60 keV Si2+ focused ion beam (FIB)-assisted deposition. A mixture of tetramethoxysilane (Si(OCH3)4) and oxygen gases was blown onto a sample surface through a 0.2-mm-inner-diameter nozzle. A gold, silicon, and beryllium alloy source was used to produce a Si2+ ion beam in the FIB system. The beam diameter and current were 0.3 µm and 0.1 nA, respectively. The deposited film with 0.1-µm thickness and 0.7-µm width consisted mainly of silicon and oxygen, and contained scarcely any carbon. The relative ratios of silicon to oxygen atomic concentration were 1:2 near the film surface and 1:1 inside the film. The resistivity of the deposited film was 2.5 MΩ·cm at 5 V, and the breakdown voltage was 40 V. It was found that it would be possible to use the deposited film as an insulator for integrated circuit repair in developing semiconductor devices.

The gauge-links connecting the parton field operators in the hadronic matrix elements appearing in the transverse momentum dependent distribution functions give rise to T -odd effects. Due to the process-dependence of the gauge-links the T -odd distribution functions appear with different prefactors. A consequence is that in the description of single spin asymmetries the parton distribution and fragmentation functions are convoluted with gluonic pole cross sections rather than the basic partonic cross sections. In this paper we calculate the gluonic pole cross sections encountered in single spin asymmetries in hadronhadron scattering. The case of back-to-back pion production in polarized proton-proton scattering is worked out explicitly. It is shown how T -odd gluon distribution functions originating from gluonic pole matrix elements appear in twofold.

MS recewed 11 tk hToz.embev 1966Abstract. Perturbation theory is used to determine the approximate location of the energies of the 2s2p 1,3P autoionizing levels of the two-electron systems.