Focused Ion Beam Assisted Etching of Quartz in XeF₂ without Transmittance Reduction for Phase Shifting Mask Repair

Abstract

The gauge-links connecting the parton field operators in the hadronic matrix elements appearing in the transverse momentum dependent distribution functions give rise to T -odd effects. Due to the process-dependence of the gauge-links the T -odd distribution functions appear with different prefactors. A consequence is that in the description of single spin asymmetries the parton distribution and fragmentation functions are convoluted with gluonic pole cross sections rather than the basic partonic cross sections. In this paper we calculate the gluonic pole cross sections encountered in single spin asymmetries in hadronhadron scattering. The case of back-to-back pion production in polarized proton-proton scattering is worked out explicitly. It is shown how T -odd gluon distribution functions originating from gluonic pole matrix elements appear in twofold.

Fabrication of micro/nano-structures using focused ion beam implantation and XeF2gas-assisted etching

“…In the FIB-GAE process, the FIB is used to initiate a chemical reaction between the substrate surface and XeF 2 gas molecules absorbed to allow the material to be volatilized locally and pumped away. The major advantages of FIB-GAE over FIB milling are higher material removal rates and lower redeposition [14,15]. The Si material redeposited on the FIB milling result's surface reacts with XeF 2 gas and the product is volatilized locally and pumped away during FIB-GAE, as shown in figure 12.…”

Miniaturization of optical spectroscopes into Fresnel microspectrometers

“…A positive gallium (Ga þ ) ion beam was used to etch nanometer patterns with xenon difluoride (XeF 2 ) enhanced etching gas. [36][37][38][39][40][41][42][43][44] Figure 2(b) shows an array of Fresnel circular gratings with about 1 mm spacing. With this tiny size and gap distance, 10,000 Fresnel circular gratings can be fabricated within a 10 × 10 cm 2 area.…”

Conicity and depth effects on the optical transmission of lithium niobate photonic crystals patterned by focused ion beam

“…It is well known that LN is chemically inert to etching. It has been shown that Xenon Difluoride (XeF 2 ) assisted FIB milling of Si [12] and Quartz [13,14] enhances the milling quality in terms of conicity and depth. XeF 2 can increase the material removal rate by reducing the re-deposition effects and by more efficient chemical etching.…”