A micro/nano-structure fabrication method is developed using focused ion beam implantation (FIBI) and FIB XeF2 gas-assisted etching (FIB-GAE). Firstly, the FIB parameters' influence on the FIBI depth is studied by SEM observation of the FIBI cross-section cutting by FIB. Nanoparticles with 10–15 nm diameter are found to be evenly distributed in the FIBI layer, which can serve as a XeF2-assisted etching mask when the ion dose is larger than 1.4 × 1017 ions cm−2. The FIBI layers being used as the etching mask for the subsequent FIB-GAE process are explored to create different micro/nano-structures such as nano-gratings, nano-electrode and sinusoidal microstructures. It is found that the method of combining FIBI with subsequent FIB-GAE is efficient and flexible in micro/nano-structuring, and it can effectively remove the redeposition effect compared with the FIB milling method.

The weak signal from rare event is readily submerged in the background and thus results in substantial challenges in its detection, which spurs researchers to decrease the surroundings background of detectors as low as possible. To this end, a low-background non-adhesive polytetrafluoroethylene (PTFE) flexible copper-clad laminate (PTFE-FCCL) was prepared by surface treatment. Specifically, the PTFE substrate was processed by ion implantation and the transition layer deposition; the adhesion between PTFE and copper of PTFE-FCCL is found to remain stable after barely immersing in liquid nitrogen. Furthermore, the surface morphology and the dielectric properties of the substrate were characterized and tested. The results presented herein offer a novel method to fabricate electronic substrates that can facilitate rare event detection.