Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane

Abstract

Amorphous SiO2-Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 o C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.

Avoiding water reservoir effects in ALD of functional complex alkali oxides by using O3 as the oxygen source

“…Using O 3 as an oxygen source for growth of Nb 2 O 5 with Nb (OEt) 5 has, however, remained unexplored until very recently, when Kukli et al utilized O 3 to deposit multilayers of SiO 2 + Nb 2 O 5 for use as a switching media. 25,26 This study confirms that the O 3 process provides films with very low hydrogen content, albeit very little is known regarding the mechanism of growth. As a starting point, we confirmed that the process does indeed exhibit self-limiting growth, with a saturation growth-per-cycle (GPC) of 0.40 ± 0.01 Å (ESI Fig.…”

Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

“…The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. A detailed description of this sample can be found in reference [7]. In Figure 2 we observe a complete voltage current cycle.…”

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

“…The atomic ratios of niobium to silicon ranged from 0 to 0.13. The films were amorphous in the as-deposited state [11]. The structure of the stacks subjected to the measurements was Al/Ti/SiO 2 :Nb 2 O 5 /TiN/Si, where the top electrodes were made by electron beam evaporation through a shadow mask.…”

“…In a previous study [11], Nb 2 O 5 -SiO 2 multilayers and mixed films were deposited on TiN electrode substrates by ALD using niobium pentaethoxide, hexakis(ethylamino) disilane, and ozone as precursors, and their ability to perform as resistive switching media in as-deposited state was examined. The conduction currents in single, non-mixed, SiO 2 and Nb 2 O 5 films tended to remain too high to enable reliable switching between high and low resistance states.…”