Silicon Photonic Hybrid Ring-Filter External Cavity Wavelength Tunable Lasers

Kobayashi, Naoki; Satô, Kenji; Namiwaka, Masahiko; Yamamoto, Keisuke; Watanabe, Shinya; Kita, Tomohiro; Yamada, Hirohito; Yamazaki, Hiroyuki

doi:10.1109/jlt.2014.2385106

Cited by 143 publications

(69 citation statements)

References 13 publications

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“…As depicted in the figure, a slight variation in transmission coefficient and in the presence of a loss in the phase delay arm, optical interference is highly affected, leading to a strong optical isolation between the output ports 1 and 2. The coupling associated with the S-shaped waveguides was estimated by extrapolation and these corresponded to a coupling length of 2 m, similarly to those reported by Yamada et al [48,49]. Temperature dependent transmission loss spectra obtained from the experiment are depicted in Fig.…”

Section: Resultssupporting

confidence: 73%

Nanoscale Silicon Waveguide Based Thermo-Optic Sensor Using a Compact Mach-Zehnder Interferometer

Rizal

Niraula

2016

Preprint

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A compact Mach-zehnder interferometer with a novel design of directional couplers and a phase shifter has been presented as a thermo-optical sensor. With the aim of reducing device size to micro and nano dimension silicon-on-insulator technology was employed. That allowed miniaturization of device size through the reduction of its cross sectional area to 0.066 μm 2 and the radius of curvature of both the arms of the directional coupler and S-bends of the phase shifter to 5 μm and C-bends to 3 μm. These nano size device dimensions made it possible to reduce the coupling gap to 0.2 μm, which resulted in a significant reduction in the coupling length. The device geometry and its performance characteristics were analyzed and optimized using coupled mode analysis and finite difference time domain simulation tools, respectively. The wavelength dependent transmission loss of the device was measured at different temperature to verify and validate its performance characteristics. Tested devices showed a remarkable temperature dependent transmission characteristic offering significant changes in transmission loss band -with as low as 0.45 0 C change in substrate temperature. The extinction ratio and the free spectral range of the device were 26 dB and 0.26 nm respectively in the wavelength range of 1549.5 nm -1550.5 nm. These results imply that the devices presented here can be used as compact and highly sensitive thermal sensors and optical switches.

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Section: Resultssupporting

confidence: 73%

Nanoscale Silicon Waveguide Based Thermo-Optic Sensor Using a Compact Mach-Zehnder Interferometer

Rizal

Niraula

2016

Preprint

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“…It has been extensively researched, and there has been a growing need for chip-scale lasers with narrow linewidth. In Figure 17, we compare the linewidth of widely-tunable lasers [23,[40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58], and a few clear trends can be noted. First is that the linewidth has steadily been improving from MHz range to kHz range in the past 20 years, and the second is that ring based tunable lasers (MRR) offer superior linewidth performance, as shown with circles.…”

Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

“…The RSOA and the SWG can be fabricated separately, and hand-picked for best performance. With Si based SWF, over 20 dBm fiber coupled output power, and (integrated) linewidth narrower than 15 kHz along the whole C-band, was achieved [50]. The authors point at least two reasons for such an impressive performance: the optimized Si-wire waveguides with losses lower than 0.5 dB/cm in C-band, and the passive alignment technology for precisely mounting a Si-waveguide tunable filter, gain chip, and booster SOA on a common platform on silicon, with minimum excess loss.…”

Section: A Performance Review Of Widely-tunable Semiconductor Lasersmentioning

confidence: 99%

Widely-Tunable Ring-Resonator Semiconductor Lasers

et al. 2017

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Chip-scale widely-tunable lasers are important for both communication and sensing applications. They have a number of advantages, such as size, weight, and cost compared to mechanically tuned counterparts. Furthermore, they allow for integration in more complex integrated photonic chips to realize added functionality. Here we give an extensive overview of such lasers realized by utilizing ring resonators inside the laser cavity. Use of ring resonators for tuning allows for wide-tunability by exploiting the Vernier effect, and at the same time improves the laser linewidth, as effective cavity length is increased at ring resonance. In this review, we briefly introduce basic concepts of laser tuning using ring resonators. Then, we study a number of laser cavity configurations that utilize two ring resonators, and compare their tuning performance. We introduce a third ring resonator to the laser cavity, study three different cavity configurations utilizing three ring resonators, and select the optimal one, for which we show that laser tuning is straightforward, provided there are monitor photodetectors on-chip. Finally, we give a literature overview showing superior linewidth performance of ring-based widely-tunable lasers.

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“…In addition, the increase of communication traffic in access networks and datacenters is higher than in other networks. Compact and high functional photonic integrated circuits (PICs) with high stability of temperature, such as heterogeneous or monolithic integrated devices, are desired in the networks. In particular, a semiconductor optical amplifier (SOA) is a key device that functions as a gain medium and nonlinear element in PICs.…”

Section: Introductionmentioning

confidence: 99%

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

Matsumoto

Akahane

Sakamoto

et al. 2016

Physica Status Solidi (a)

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This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.In this article, we evaluated the static and dynamic characteristics of 20-layer stacked quantum dot semiconductor optical amplifiers (QD-SOAs) grown on an InP(311)B substrate with a strain compensation technique by ultrafast signals using an optical frequency comb. The gain peak wavelength of the fabricated QD-SOA was 1520 nm, and a maximum gain of approximately 15.8 dB was obtained when the injection current was 350 mA. By using optical bit rate multiplier modules, an optical pulse, which was generated by the use of the optical frequency comb, was multiplexed. We observed the dynamic behavior of the QD-SOA with the pulse trains. The minimum interval between pulses was 4.2 ps, and we measured using an optical sampling oscilloscope. It was found the QD-SOA could respond to ultrafast pulses that were equivalent to the signals of 220 Gb s À1 class speed without any large pattern distortions. In addition, we could obtain a rather clear optical pulse waveform. We also estimated the gain recovery time of the QD-SOA to be 6.0 ps by using a pump probe-like method. One of the reasons that the fabricated QD-SOA could respond to ultrafast signals was its ultrashort gain recovery time.

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Silicon Photonic Hybrid Ring-Filter External Cavity Wavelength Tunable Lasers

Cited by 143 publications

References 13 publications

Nanoscale Silicon Waveguide Based Thermo-Optic Sensor Using a Compact Mach-Zehnder Interferometer

Nanoscale Silicon Waveguide Based Thermo-Optic Sensor Using a Compact Mach-Zehnder Interferometer

Widely-Tunable Ring-Resonator Semiconductor Lasers

Dynamic characteristics of 20‐layer stacked QD‐SOA with strain compensation technique by ultrafast signals using optical frequency comb

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