Silicon sensors

Middelhoek, S.; Bellekom, A A; Dauderstädt, Ulrike; French, P.J.; Hout, Sebastiaan R. in 't; Kindt, W.J.; Riedijk, F.R.; Vellekoop, M.J.

doi:10.1088/0957-0233/6/12/001

Cited by 34 publications

(18 citation statements)

References 58 publications

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“…For use in FNS systems, where the sensor may be exposed to widely varying temperatures, temperature compensation may be necessary. Many methods of temperature compensation are available [36], [37]. Ideally temperature compensation should be included on the sensor itself.…”

Section: Temperature Effectsmentioning

confidence: 99%

A silicon-based tactile sensor for finger-mounted applications

Beebe

Denton

Radwin

et al. 1998

IEEE Trans. Biomed. Eng.

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Section: Temperature Effectsmentioning

confidence: 99%

A silicon-based tactile sensor for finger-mounted applications

Beebe

Denton

Radwin

et al. 1998

IEEE Trans. Biomed. Eng.

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“…It was found that GaSb-FeGa 1.3 -based strain gauges possess better deformation characteristics than GaSb-based gauges. Semiconductor resistance strain gauges, which convert a mechanical stimulus into an electrical signal, are widely used in measuring stresses and strains in many components such as structural elements, machine parts and mechanical test samples [1,2]. Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5].…”

mentioning

confidence: 99%

Strain gauges of GaSbFeGa1.3 eutectic composites

et al. 2004

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A needle-shaped metallic FeGa 1.3 phase oriented in a specific direction and uniformly distributed within a GaSb matrix was grown by a vertical Bridgman method. Strain-gauge characteristics, such as strain-sensitivity coefficient (S), temperature coefficient of strain sensitivity (TCS) and temperature coefficient of resistance, of GaSb and GaSb-FeGa 1.3 eutectic alloy have been investigated in the range of 200 to 400 K under deformation up to strains of 1.3 × 10 −3 . The value of S of the GaSb-FeGa 1.3 composition is measured to be 40 ± 5 and its TCS is about 0.2 % deg −1 when the current is perpendicular to the needles and the needles are parallel to the plane of the gauge substrate. The strain-sensitivity characteristics are linear and hysteresis free in the investigated temperature range in the aforementioned direction. It was found that GaSb-FeGa 1.3 -based strain gauges possess better deformation characteristics than GaSb-based gauges. Semiconductor resistance strain gauges, which convert a mechanical stimulus into an electrical signal, are widely used in measuring stresses and strains in many components such as structural elements, machine parts and mechanical test samples [1,2]. Ge-, Si-and Ge-Si-based strain gauges have been widely utilized and their properties have been investigated [3][4][5]. However, these semiconductor sensors exhibit a high resistivity and a high strain-sensitivity coefficient as a function of temperature. Also, there is a nonlinear behavior with strain. These factors cause a number of difficulties in modeling and designing strain-gauge-type devices. Therefore, the investigation of potential semiconductor materials to be used as mechanical sensors with thermostable parameters is essential.GaSb is a candidate semiconductor for the exploration of its strain effect due to its interesting band structure [6,7]. Although the sensors based on GaSb show a large strainsensitivity coefficient, they exhibit a significant temperature dependence of resistivity and strain-sensitivity coefficient. Interestingly, the incorporation of FeGa 1.3 metallic phase in u Fax: +994-1239-59-61, E-mail: rashad@physics.ab.az the GaSb matrix causes distinctive features of the straingauge characteristics in this material. Such heterogeneous structures possess the system of a semiconductor-metal type of GaSb-FeGa alloy. In our previous study [8], microstructure, electrical and thermal properties of GaSb-FeGa 1.3 eutectic composition were revealed and features of electron and phonon processes were studied. In these systems, it is considered that the electrical resistivity of the semiconductormetal boundaries is affected by the amount of the deformation on the alloy. Also, by forming eutectic alloys, the interactions between atoms are weakened and the bond energy of valance electrons that is related to the essential redistribution of charge electron densities of the nearby atoms of all components on these boundaries diminishes. This may have some considerable effect on the strain-gauge characteristics of th...

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“…Electroacoustic devices implemented on Si substrates offer the opportunity to integrate the device with the surrounding electronic circuitry on the same chip. Moreover, the opposite TCD of Si ( ∼30 ppm/°C) and AlN (∼ -30 ppm/°C) allows the realisation of zero-temperature-coefficient acoustic devices at the proper film thickness to be used as sensors and actuators where low loss, low thermal drift, high sensitivity and high signal-to-noise ratio are demanded [7,8]. Pt is the material of choice for metallic components that have to withstand oxidation, thank to its high temperature coefficient of resistance: Pt can be grown in thin film form and both the IDTs and ground electrodes can be easily defined by lift off technique.…”

Section: Introductionmentioning

confidence: 99%

Surface Acoustic Wave Devices for Harsh Environment

Caliendo¹

2011

Acoustic Waves - From Microdevices to Helioseismology

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Silicon sensors

Cited by 34 publications

References 58 publications

A silicon-based tactile sensor for finger-mounted applications

A silicon-based tactile sensor for finger-mounted applications

Strain gauges of GaSbFeGa1.3 eutectic composites

Surface Acoustic Wave Devices for Harsh Environment

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