Silicon sensors for trackers at high-luminosity environment

Peltola, T.

doi:10.1016/j.nima.2015.03.031

Cited by 6 publications

(4 citation statements)

References 44 publications

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“…This choice is motivated by manufacturing constraints. The p-type sensors have been proven to be favourable in high radiation environements as they do not undergo type inversion, appear to be more resistant to non-Gaussian noise due to junction breakdown, and provide fast readout at n-type electrodes [9][10][11].…”

Section: Jinst 18 P09010mentioning

confidence: 99%

Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Kieseler,

Dias de Almeida,

Kałuzińska

et al. 2023

J. Inst.

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The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8” silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5· 1014 to 1 · 1016 neq/cm2.

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Section: Jinst 18 P09010mentioning

confidence: 99%

Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Kieseler,

Dias de Almeida,

Kałuzińska

et al. 2023

J. Inst.

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“…Moreover, there are studies showing a strong dependence of these macroscopic damage effects on particle type and hence violating the Non Ionizing Energy Loss scaling hypothesis (NIEL) used so far to scale the damage produced by different particles with different energy [14][15][16][17]. Thus, the defect electrical characteristics, energy level in the bandgap of the irradiated material, its capture cross sections for electrons and holes, together with its concentration/generation rate after irradiation with different particles are the necessary defect parameters needed for calculating the impact on device characteristics [18]. Knowing also the defect chemical structure allows developing defect engineering strategies for diminishing the formation of detrimental defects or for generating other defects able to compensate the identified harmful effects.…”

Section: Introductionmentioning

confidence: 99%

Experimental techniques for defect characterization of highly irradiated materials and structures

Pintilie¹,

Nistor²,

Nistor³

et al. 2017

Proceedings of the 25th International Workshop on Vertex Detectors — PoS(Vertex 2016)

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“…The RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" [5,6] was formed in 2002 with the objective to develop semiconductor sensors that meet the HL-LHC requirements mentioned above.…”

Section: Introductionmentioning

confidence: 99%

Simulation of radiation-induced defects

Peltola¹

2015

Proceedings of 24th International Workshop on Vertex Detectors — PoS(VERTEX2015)

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Mainly due to their outstanding performance the position sensitive silicon detectors are widely used in the tracking systems of High Energy Physics experiments such as the ALICE, ATLAS, CMS and LHCb at LHC, the world's largest particle physics accelerator at CERN, Geneva. The foreseen upgrade of the LHC to its high luminosity (HL) phase (HL-LHC scheduled for 2023), will enable the use of maximal physics potential of the facility. After 10 years of operation the expected fluence will expose the tracking systems at HL-LHC to a radiation environment that is beyond the capacity of the present system design. Thus, for the required upgrade of the all-silicon central trackers extensive measurements and simulation studies for silicon sensors of different designs and materials with sufficient radiation tolerance have been initiated within the RD50 Collaboration. Supplementing measurements, simulations are in vital role for e.g. device structure optimization or predicting the electric fields and trapping in the silicon sensors. The main objective of the device simulations in the RD50 Collaboration is to develop an approach to model and predict the performance of the irradiated silicon detectors using professional software. The first successfully developed quantitative models for radiation damage, based on two effective midgap levels, are able to reproduce the experimentally observed detector characteristics like leakage current, full depletion voltage and charge collection efficiency (CCE). Recent implementations of additional traps at the SiO 2 /Si interface or close to it have expanded the scope of the experimentally agreeing simulations to such surface properties as the interstrip resistance and capacitance, and the position dependency of CCE for strip sensors irradiated up to ∼1.5 × 10 15 n eq cm −2 . Insights to the development processes of the defect models as well as a review of the recent results from TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

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Silicon sensors for trackers at high-luminosity environment

Cited by 6 publications

References 44 publications

Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

Experimental techniques for defect characterization of highly irradiated materials and structures

Simulation of radiation-induced defects

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