Silicon Solar Cells

Altermatt, Pietro P.

doi:10.1007/0-387-27256-9_11

Cited by 6 publications

(3 citation statements)

References 54 publications

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“…All simulations are performed at 300 K. The bandgap model parameter, E g , is adjusted to achieve an intrinsic carrier concentration of 9.65 × 10 9 cm −3 at 300 K [47].…”

Section: Tcad Physical Modelmentioning

confidence: 99%

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

Kumar¹,

Nayfeh²

2015

J Comput Electron

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This study investigates the performance of impact ionization (II) enhanced thin film c-Si solar cells using Technology Computer Aided Design simulation. 2-D numerical simulation is carried out to study the effect of II concerning the electrical and optical properties of the c-Si solar cell. We have introduced P + pocket with a high doping density of magnitude >10 18 cm −3 in an intrinsic absorber layer which increases the electric field near the junction up to 1 MV/m. The effects of II on various solar cell parameters like short circuit current density, open circuit voltage and quantum efficiency are investigated. The simulation results show that high concentration of P + pocket enhances the short circuit current density (J sc ) of c-Si solar cell without affecting its open circuit voltage (V oc ). In addition, the modelling results depict that by varying the doping concentration of P + pocket from 10 18 to 9 × 10 18 cm −3 , the current density increases from 18 to 32 mA/cm 2 . Furthermore, an internal quantum efficiency of 189 % is achieved at P + pocket doping concentration of 9 × 10 18 cm −3 .

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“…All simulations are performed at 300 K. The bandgap model parameter, E g , is adjusted to achieve an intrinsic carrier concentration of 9.65 × 10 9 cm −3 at 300 K [47].…”

Section: Tcad Physical Modelmentioning

confidence: 99%

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

Kumar¹,

Nayfeh²

2015

J Comput Electron

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“…1 is another idealization which is in focus in this study. It has been shown that a deviation from the principle of superposition takes place at cell voltages below about 0.4 V which affects most crystalline-Si cells [13], [14]. Its manifestation in the I-V curve is irradiance-dependent, and is very similar to a shunting of the p-n junction (affecting the slope near short circuit as well as at intermediate cell voltages).…”

Section: Motivationmentioning

confidence: 99%

Physically-consistent parameterization in the modeling of solar photovoltaic devices

Yordanov

Midtgård

2011

2011 IEEE Trondheim PowerTech

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This research tests the standard one-diode model of a crystalline-Si photovoltaic cell, focusing on the physical accuracy. In particular, the (apparent) shunt resistance and the diode ideality factor are studied. Current-voltage characteristics of illuminated crystalline-Si photovoltaic modules are analyzed, and some limits of applicability of the standard model are given. Typical values of the ideality factor for crystalline-Si devices are derived from own experimental data as well as from recently published literature. It is shown that the contribution of the apparent shunt resistance is only significant for cell voltages below about 0.45 V, and depends on irradiance. This result is consistent with earlier research. Some reference books on Photovoltaics give a wrong shape of the electrical characteristic based on a non-physical interpretation of the shunt resistance. This paper may be particularly useful for power electronics engineers designing inverters and maximum-power-point tracking algorithms. IndexTerms--P-n junctions, Photovoltaic cells, Semiconductor device modeling, Shunt resistance I. MOTIVATIONOWER electronics engineers designing inverters and maximum-power-point tracking (MPPT) algorithms for solar photovoltaic (PV) systems include in the design process extensive computer-aided simulations. Models of the photovoltaic sub-system and of the balance-of-system components (the power converter plus the MPP tracker) are implemented and studied using software tools like e.g. PSpice. Lumped-circuit models of PV devices have been established in the past half a century, and their applications abound in the literature. These models are quite simple in the case of crystalline-Si devices which still dominate the PV market. An individual solar cell can be represented by a current source, a diode, and two resistances. The model of a crystalline-Si PV module is similar, but has multiple diodes in series (or a single diode with an upscaled ideality factor), plus a few by-pass diodes. However, the parameterization of the above models is not straight-forward, if a correct representation of the physical reality is aimed at. Indeed, the current-voltage characteristic (I-V curve) of a non-shaded PV device may look very simple; ). however, the corresponding mathematical formulations (there are many) can describe a whole wealth of I-V curve types. The lack of sufficient physical understanding of the model parameters may lead to wrong assumptions (as there are always aspirations for simplification) that may affect the design of the balance-of-system components, such as MPP trackers, in a negative way. Irradiance-dependent (apparent) shunt resistance, series-resistance effects, and cell ideality factors greater then 1 deserve special attention. Descriptions of subtleties related to these parameters, typical values, and some basic properties common to all I-V curves are missed in (otherwise extensive) handbooks on PV science and engineering [1], [2].The purpose of this paper is to provide a factual scientific basis for unders...

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“…Optoelectronic devices are semiconductor heterojunction devices that take advantage of complicated interactions between electron and light, such as light-emitting diodes and solar cells [1,2]. For optoelectronic device applications, the mostly-studied semiconductors are wurtzite group-III nitrides such as GaN and group-II oxides such as ZnO [3,4].…”

Section: Introductionmentioning

confidence: 99%

Absolute deformation potentials and absolute energy levels of III-N, ZnO, and II-IV-N₂ semiconductors for optoelectronic applications

Luo,

Wu,

Lyu

2024

J. Phys. D: Appl. Phys.

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Absolute deformation potentials and absolute energy levels for III-N, ZnO, and II-IV-N2 semiconductors are systematically determined from hybrid-functional calculations. Separate bulk and slab calculations are combined and the vacuum level is taken as the common reference. The trends in the absolute deformation potentials are rationalized by the kinetic energy effect and the bonding (or antibonding) character of the band edge states. The calculated absolute energy levels can be used to obtain the natural band alignmentbetween these semiconductors and are in accordance with the available results. The determined parameters are of practical importance to the optoelectronic devices designs.

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Silicon Solar Cells

Cited by 6 publications

References 54 publications

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

Physically-consistent parameterization in the modeling of solar photovoltaic devices

Absolute deformation potentials and absolute energy levels of III-N, ZnO, and II-IV-N₂ semiconductors for optoelectronic applications

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Silicon Solar Cells

Cited by 6 publications

References 54 publications

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells

Physically-consistent parameterization in the modeling of solar photovoltaic devices

Absolute deformation potentials and absolute energy levels of III-N, ZnO, and II-IV-N2 semiconductors for optoelectronic applications

Contact Info

Product

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Absolute deformation potentials and absolute energy levels of III-N, ZnO, and II-IV-N₂ semiconductors for optoelectronic applications