Silicon transport during oxidation

Murrell, M.P.; Sofield, C.J.; Sugden, S.

doi:10.1080/13642819108205560

Cited by 15 publications

(5 citation statements)

References 12 publications

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“…The transported oxidizing gas is diffused across the oxide film towards the silicon and it reacts at the silicon interface to form a new oxide layer. This layerby-layer oxide growth has been verified with the sequential 18 O 2 / 16 O 2 tracer experiments on Si oxidation, in which Si diffusion through the oxide does not occur [14]. In practice, the thermal oxidation of silicon is carried out at high temperatures under atmospheric pressure.…”

Section: Silicon Oxidation Kineticssupporting

confidence: 54%

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Growth law of silicon oxides by dry oxidation

Kim

Lee

et al. 1996

Semicond. Sci. Technol.

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A theoretical description of the kinetic mechanism of thermal oxidation in silicon is proposed by complementing the Deal-Grove model. The relationship of the classical linear-parabolic growth law is generalized to the logarithmic growth law which provides a complete description for the whole regime of oxide films. In particular, the enhanced oxidation rate in the thin regime may be attributed to the diffusion length, which is characterized by the difference between the activation energies of the diffusion process and the reaction process. Our fitting of the logarithmic growth law to several experimental results shows excellent agreement and the fitting parameters also provide activation energies of 1.50 and 2.49 eV for the interfacial reaction and diffusion in oxide respectively.

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Section: Silicon Oxidation Kineticssupporting

confidence: 54%

“…Therefore, the oxidant participates in the chemical reaction again and continues to form the ring structure providing the oxide layer. This layer-by-layer growth kinetics can be supported by sequential 18 O 2 / 16 O 2 tracer experiments [14].…”

Section: Resultsmentioning

confidence: 63%

Growth law of silicon oxides by dry oxidation

Kim

Lee

et al. 1996

Semicond. Sci. Technol.

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“…To the best of our knowledge there is only one previous experiment 16 of this kind, performed in thick oxides grown in H 2 O vapor and with a poor depth resolution ͑approximately 50 nm͒, which indicated the immobility of Si during thermal growth of Si oxide on Si͑100͒. An indirect investigation, 17 using O isotopic substitution, led to the same conclusion. We report here on an experimental investigation of the situation of present practical interest using ͑i͒ isotopic substitution of Si in association with nuclear resonance profiling with subnanometric resolution, aiming to provide direct and high depth resolution evidence of the transport of Si, and ͑ii͒ thermal oxide growth on c-Si in dry O 2 .…”

Section: F Gorris and W H Schultesupporting

confidence: 72%

Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) inO2

et al. 1999

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The transport of Si atoms during thermal growth of silicon-oxide films on silicon in dry O 2 was investigated by isotopic substitution of Si. The experiment consisted of depositing a 7.6-nm-thick epitaxial layer of 29 Si on a Si͑111͒ substrate and determining the 29 Si profiles, with subnanometric depth resolution, before and after oxidation in 50 mbar of dry O 2 at 1000°C for 60 min. The results constitute an experimental confirmation of a widely held belief that Si does not diffuse through the growing oxide to react with oxygen at the gas/oxide interface, leaving O 2 as the only mobile species.

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“…[210][211][212][213][214] A comprehensive review of isotopic methods applied to Si systems has recently been published. 25 Many studies involved the use of sequential oxidation of Si in 16 NRA [210][211][212][213][214]216,[627][628][629] ͑see, for example, Fig. 33͒, MEIS, 199,200,202,204,238,630,631 ͑see, for example, Fig.…”

Section: B Growth Mechanisms Of Ultrathin Oxides Beyond the Deal-grmentioning

confidence: 99%

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Green¹,

Gusev

Degraeve

et al. 2001

Journal of Applied Physics

749

345

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The outstanding properties of SiO 2 , which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO 2 interface, which forms the heart of the modern metal-oxide-semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin ͑Ͻ4 nm͒ SiO 2 and Si-ON ͑silicon oxynitride͒ gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices will be manufactured with SiO 2 and Si-ON for the foreseeable future, continued scaling of integrated circuit devices, essentially the continued adherence to Moore's law, will necessitate the introduction of an alternate gate dielectric once the SiO 2 gate dielectric thickness approaches ϳ1.2 nm. It is hoped that this article will prove useful to members of the silicon microelectronics community, newcomers to the gate dielectrics field, practitioners in allied fields, and graduate students. Parts of this article have been adapted from earlier articles by the authors ͓L.

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Silicon transport during oxidation

Cited by 15 publications

References 12 publications

Growth law of silicon oxides by dry oxidation

Growth law of silicon oxides by dry oxidation

Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) inO2

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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Silicon transport during oxidation

Cited by 15 publications

References 12 publications

Growth law of silicon oxides by dry oxidation

Growth law of silicon oxides by dry oxidation

Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) inO2

Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

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Product

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Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits